MMBD914

MMBD914 Ele k troni sche Bauelemente RoHS Compliant Product Surface Mount Switching Diode FEATURES A suffix of "-C" specifies halogen & lead-free A L 3 1 · · · · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance 3 Top View 2 BS V G C 3 CATHODE 1 ANODE 1 2 D H K J MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc SOT-23 Dim A B C D G H J K L S V Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C All Dimension in mm DEVICE MARKING MMBD914 = 5D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 mAdc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR — — CT VF trr — — — 25 5.0 4.0 1.0 4.0 nAdc mAdc pF Vdc ns 100 — Vdc   0.062 in.   0.024 in. 99.5% alumina. http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 MMBD914 Elektronische Bauelemente Surface Mount Switching Diode 820 Ω +10 V 2.0 k 100 µH 0.1 µF DUT 50 Ω Output Pulse Generator 50 Ω Input Sampling Oscilloscopes VR Input Signal 90% IR IR(REC) = 1.0 mA Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) IF 0.1 µF tr 10% tp t IF trr t Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 TA = 85°C I F, Forward Current (mA) 10 TA = 25°C 1.0 10 TA = 150°C TA = 125°C TA = –40°C IR , Reverse Current (µA) 1.0 0.1 TA = 85°C TA = 55°C 0.01 TA = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF, Forward Voltage (V) 0.001 0 10 20 30 40 50 VR, Reverse Voltage (V) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD , Diode Capacitance (pF) 0.64 0.60 0.56 0.52 0 2.0 4.0 VR, Reverse Voltage (V) 6.0 8.0 Figure 4. Capacitance http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2