MMBT2222A

MMBT2222A NPN Silicon Elektronische Bauelemente RoHS Compliant Product General Purpose Transistor A suffix of "-C" specifies halogen & lead-free FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT2907A) Ideal for Medium Power Amplification and Switching 1 BASE COLLECTOR A L 3 3 Top View 1 2 3 BS 1 2 V 2 EMITTER G C D H K J MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 2222 30 60 5.0 600 2222A 40 75 6.0 Unit Vdc Vdc Vdc mAdc SOT-23 Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C H J K L S V All Dimension in mm DEVICE MARKING MMBT2222 = M1B; MMBT2222A = 1P ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 60 Vdc, IE = 0, TA = 125°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) 1. FR± 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. http://www.SeCoSGmbH.com MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A MMBT2222A V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO 30 40 60 75 5.0 6.0 — — — — — — — — — — — — — 10 0.01 0.01 10 10 100 20 Vdc Vdc Vdc nAdc µAdc IEBO IBL nAdc nAdc REM : Thermal Clad is a trademark of the Bergquist Company. Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 MMBT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) (IC = 150 mAdc, VCE = 10 Vdc) (3) (IC = 150 mAdc, VCE = 1.0 Vdc) (3) (IC = 500 mAdc, VCE = 10 Vdc) (3) Collector – Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) hFE 35 50 75 35 100 50 30 40 VCE(sat) MMBT2222 MMBT2222A MMBT2222 MMBT2222A VBE(sat) MMBT2222 MMBT2222A MMBT2222 MMBT2222A — 0.6 — — 1.3 1.2 2.6 2.0 — — — — 0.4 0.3 1.6 1.0 Vdc — — — — 300 — — — Vdc — MMBT2222A only MMBT2222 MMBT2222A (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (4) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small – Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) MMBT2222 MMBT2222A hie MMBT2222A MMBT2222A hre MMBT2222A MMBT2222A hfe MMBT2222A MMBT2222A hoe MMBT2222A MMBT2222A rb, Cc MMBT2222A NF MMBT2222A — 4.0 — 150 dB 5.0 25 35 200 ps 50 75 300 375 — — 8.0 4.0 — 2.0 0.25 8.0 1.25 X 10– 4 fT MMBT2222 MMBT2222A Cobo — Cibo — — 30 25 kΩ 8.0 pF 250 300 — — pF MHz mmhos SWITCHING CHARACTERISTICS (MMBT2222A only) Delay Time Rise Time Storage Time Fall Time ( (VCC = 30 Vdc, VBE(off) = – 0.5 Vdc, , , IC = 150 mAdc, IB1 = 15 mAdc) ( (VCC = 30 Vdc, IC = 150 mAdc, , , IB1 = IB2 = 15 mAdc) td tr ts tf — — — — 10 ns 25 225 ns 60 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. http://www.SeCoSGmbH.com Any changing of specification will not be informed individual v v 01-Jun-2002 Rev. A Page 2 of 5 MMBT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V +16 V 0 –2 V 1.0 to 100 µs, Duty Cycle ≈ 2.0% 1 kΩ < 2 ns 200 +16 V 0 CS* < 10 pF –14 V < 20 ns 1k 1N914 CS* < 10 pF 1.0 to 100 µs, Duty Cycle ≈ 2.0% + 30 V 200 –4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time 1000 700 500 300 hFE , DC Current Gain 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, Collector Current (mA) 30 50 70 100 200 300 500 700 1.0 k Figure 3. DC Current Gain 1.0 VCE , Collector–Emitter Voltage (V) 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 I B, Base Current (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 MMBT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor 200 100 70 50 t, Time (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) 200 300 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) 200 300 500 t′s = ts – 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, Time (ns) tf Figure 5. Turn – On Time Figure 6. Turn – Off Time 10 8.0 NF, Noise Figure (dB) IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ RS = OPTIMUM RS = SOURCE RS = RESISTANCE NF, Noise Figure (dB) 10 f = 1.0 kHz 8.0 IC = 50 µA 100 µA 500 µA 1.0 mA 6.0 6.0 4.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 f, Frequency (kHz) 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, Source Resistance (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 f T, Current–Gain Bandwidth Products (MHz) 20 Ceb Capacitance (pF) 10 7.0 5.0 Ccb 3.0 2.0 0.1 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Reverse Voltage (V) 20 30 50 2.0 3.0 5.0 7.0 10 20 IC, Collector Current (mA) 30 50 70 100 Figure 9. Capacitances Figure 10. Current–Gain Bandwidth Product http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 MMBT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor 1.0 TJ = 25°C 0.8 Coefficient (mV/ °C) VBE(sat) @ IC/IB = 10 V, Voltage (V) 0.6 VBE(on) @ VCE = 10 V 0.4 1.0 V +0.5 0 – 0.5 – 1.0 – 1.5 – 2.0 VCE(sat) @ IC/IB = 10 – 2.5 RqVB for VBE RqVC for VCE(sat) 0.2 0 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 I C, Collect Current (mA) 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C, Collect Current (mA) 500 Figure 11. “On” Voltages Figure 12. Temperature Coefficients http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5