MMBT2222AT

MMBT2222AT Elektronische Bauelemente NPN Silicon General Purpose Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching SOT-523 MARKING CODE 1P PACKAGE INFORMATION Package SOT-523 MPQ 3K Leader Size REF. 7 inch A B C D G J Millimeter Min. Max. 1.50 1.70 0.75 0.95 0.60 0.80 0.23 0.33 0.50BSC 0.10 0.20 REF. K M N S Millimeter Min. Max. 0.30 0.50 o --10 o --10 1.50 1.70 Collector 3 1 Base 2 Emitter MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation FR-4 Board @ TA=25°C Thermal Resistance, Junction to Ambient Junction & Storage Temperature 1 Symbol VCEO VCBO VEBO IC PD RθJA TJ, TSTG Ratings 40 75 6 600 150 833 -55~150 Unit V V V mA mW °C / W °C Note: 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Aug-2011 Rev. A Page 1 of 5 MMBT2222AT Elektronische Bauelemente NPN Silicon General Purpose Transistors ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Characteristic Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current 1 Symbol V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Min. 40 75 6 - Max. 20 100 1 Unit V V V nA nA Test Conditions IC=10 mA, IB=0 IC=10µA, IE=0 IE= -10 µA, IC=0 VCE=60V, VEB=3V VCE=60V, VBE=3V Off Characteristics On Characteristics 35 50 DC Current Gain 1 0.3 V 1 1.2 V 2 IC=0.1mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V IC=500mA, VCE=10V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA hFE 75 100 40 - Collector-Emitter Saturation Voltage VCE(sat) 0.6 Base-Emitter Saturation Voltage VBE(sat) - Small-Signal Characteristics Curren-Gain-Bandwidth Product Output Capacitance Input Capacitance Input Impedancen Voltage Feedback Ratio Small-Signal Current Gain Output Admittance Noise Figure fT Cobo Cibo hie hre hfe hoe NF 250 0.25 75 25 8 30 1.25 4 375 200 4.0 MHz pF pF K X10 -4 VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f =1.0 MHz VBE=0.5V, IE=0, f =1.0 MHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=10mAdc, f=1.0kHz µmhos VCE=10V, IC=10mAdc, f=1.0kHz dB VCE=10V, IC=100µA, RS=1K , f=1.0kHz Switching Characteristics Delay Time Rise Time Storage Time Fall Time Td Tr TS TF 10 nS 25 225 nS 60 VCC=3V, VBE= -0.5 V, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=IB2=15mA Note: 1. Pulse Test: Pulse Width ≤ 300s, Duty Cycle ≤ 2.0%. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Aug-2011 Rev. A Page 2 of 5 MMBT2222AT Elektronische Bauelemente NPN Silicon General Purpose Transistors CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Aug-2011 Rev. A Page 3 of 5 MMBT2222AT Elektronische Bauelemente NPN Silicon General Purpose Transistors CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Aug-2011 Rev. A Page 4 of 5 MMBT2222AT Elektronische Bauelemente NPN Silicon General Purpose Transistors CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Aug-2011 Rev. A Page 5 of 5