MMBT2222AW

MMBT2222AW Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free NPN Silicon General Purpose Transistor SOT-323 FEATURE    Complementary PNP Type Available(MMBT2907AW) Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching 1 A 3 L 3 Top View 2 CB 1 2 K E D MARKING CODE MMBT2222AW = K3P, 1P F G H J REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 75 40 6 600 200 +150, -55 ~ +150 Unit V V V mA mW ℃ 20-Oct-2009 Rev. C Page 1 of 4 MMBT2222AW Elektronische Bauelemente NPN Silicon General Purpose Transistor ELECTRICAL CHARACTERISTICS at Ta = 25°C CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter=Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current TEST CONDITION IC=10μA, IE=0 IC = 10 mA, IB = 0 IE=-10μA, IC=0 VCB=70V, IE=0 VEB=35V, IC=0 VEB=3V, IC=0 VCE=10V, IC=-0.1mA VCE=10V, IC=1mA SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT Cob Td Tr TS TF MIN. 75 40 6 MAX. UNIT V V V 100 100 100 35 50 75 100 40 35 1 0.3 2.0 1.2 300 8 10 25 225 60 300 nA nA nA DC Current Gain VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=1V, IC=500mA Collector-emitter Saturation Voltage IC=500mA, IB=50mA IC=150mA, IB=15mA V V V V MHz pF nS nS nS nS Base-Emitter Saturation Voltage Transition Frequency Output Capacitance Delay Time Rise Time Storage Time Fall Time IC=500mA, IB=50mA IC=150mA, IB=15mA VCE=20V, IC=20mA, f=1MHz VCB=10V, IE=0, f=1MHz Vcc=30V, VBE(Off)=-0.5V IC=150mA, IB1=15mA Vcc=30V, IC=150mA IB1=- IB2 =15mA 20-Oct-2009 Rev. C Page 2 of 4 MMBT2222AW Elektronische Bauelemente NPN Silicon General Purpose Transistor CHARACTERISTIC CURVES 20-Oct-2009 Rev. C Page 3 of 4 MMBT2222AW Elektronische Bauelemente NPN Silicon General Purpose Transistor CHARACTERISTIC CURVES 20-Oct-2009 Rev. C Page 4 of 4