MMBT2222Q

MMBT2222Q Elektronische Bauelemente RoHS Compliant Product NPN Silicon General Purpose Transistor SOT-89 1.BASE 2.COLLECTOR 3.EMITTER D D1 Dimensions In Millimeters A Dimensions In Inches Min 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 0.060TYP Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 Symbol A b b1 Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 FEATURES E1 E c b1 Power dissipation PCM : 1 W I CM : 0. 6 A Collector-base voltage V (BR)CBO : 75 V Operating and storage junction temperature range T J T stg : -55 to +150 Ta m b = 2 5 L D D1 E E1 b C Collector current e e1 e e1 L 3.100 1.100 0.114 0.035 0.122 0.043 ELECTRICAL CHARACTERISTICS Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) unless Test Ic= 10 A otherwise IE=0 IB=0 IC=0 IE=0 IC=0 IC= 0.1mA IC= 1mA IC= 10mA IC= 150mA specified MIN 75 40 6 0. 01 0. 01 35 50 75 100 50 40 1 0.3 2.0 0.6 300 1.2 V V V V MHz 300 MAX UNIT V V V A A Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current conditions Ic= 10mA IE=10 A VCB=60V , VEB= 3V , VCE=10V, VCE=10V, VCE=10V, VCE=10V, VCE=1V, VCE=10V, DC current gain hFE(3) hFE(4) hFE(5) hFE(6) IC= 150mA IC= 500mA Collector-emitter saturation voltage VCE(sat) VCE(sat) IC=500 mA, IB= 50mA IC=150 mA, IB= 15mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA VCE=20V, IC= 20mA Base-emitter saturation voltage VBE(sat) VBE(sat) Transition frequency fT Cob td tr tS tf f=100MHz VCB=10V, I E= 0 Output Capacitance Delay time Rise time Storage time Fall time http://www.SeCoSGmbH.com f=1MHz VCC=30V, IC=150mA VBE(off)=0.5V,IB1=15mA VCC=30V, IC=150mA IB1= IB2= 15mA 8 10 25 225 60 pF nS nS nS nS Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 MMBT2222Q Elektronische Bauelemente General Purpose Transistor NPN Silicon SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +16 V 0 -2 V 1.0 to 100 μs, DUTY CYCLE ≈ 2.0% 1 kΩ 200 +16 V 0 < 2 ns CS* < 10 pF 1.0 to 100 μs, DUTY CYCLE ≈ 2.0% 1k 1N914 -4 V +30 V 200 -14 V < 20 ns CS* < 10 pF Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 TJ = 125°C 25°C -55°C VCE = 1.0 V VCE = 10 V 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k Figure 3. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 0.6 0.4 0.2 0 0.005 IC = 1.0 mA 10 mA 150 mA 500 mA 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 MMBT2222Q Elektronische Bauelemente General Purpose Transistor NPN Silicon 200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 t′s = ts - 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, TIME (ns) tf 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 Figure 5. Turn–On Time 10 8.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 IC = 1.0 mA, RS = 150 Ω 500 μA, RS = 200 Ω 100 μA, RS = 2.0 kΩ 50 μA, RS = 4.0 kΩ 10 Figure 6. Turn–Off Time NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) RS = OPTIMUM RS = SOURCE RS = RESISTANCE f = 1.0 kHz 8.0 6.0 4.0 2.0 0 50 IC = 50 μA 100 μA 500 μA 1.0 mA 0.5 1.0 2.0 5.0 10 20 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 8. Source Resistance Effects 500 VCE = 20 V TJ = 25°C 30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 3.0 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) Ccb 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 20 30 50 Figure 9. Capacitances Figure 10. Current–Gain Bandwidth Product http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 4 MMBT2222Q Elektronische Bauelemente General Purpose Transistor NPN Silicon 1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k COEFFICIENT (mV/ °C) 1.0 V +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 0.2 0.5 RqVB for VBE 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 RqVC for VCE(sat) Figure 11. “On” Voltages Figure 12. Temperature Coefficients http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 4 of 4