MMBT2907A

MMBT2907A PNP Silicon Elektronische Bauelemente FEATURES RoHS Compliant Product General Purpose Transistor · · · A suffix of "-C" specifies halogen & lead-free A COLLECTOR Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Medium Power Amplification and Switching 1 BASE L 3 3 Top View 1 2 3 BS 1 2 V 2 EMITTER G C D H K J MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 2907 –40 –60 –5.0 –600 2907A –60 Unit Vdc Vdc Vdc mAdc SOT-23 Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C H J K L S V All Dimension in mm DEVICE MARKING MMBT2907 = M2B; MMBT2907A = 2F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc) Collector Cutoff Current (VCB = –50 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0, TA = 125°C) Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 http://www.SeCoSGmbH.com V(BR)CEO MMBT2907 MMBT2907A V(BR)CBO V(BR)EBO ICEX ICBO MMBT2907 MMBT2907A MMBT2907 MMBT2907A IB — — — — — –0.020 –0.010 –20 –10 –50 –40 –60 –60 –5.0 — — — — — –50 Vdc Vdc Vdc nAdc µAdc   0.062 in.   0.024 in. 99.5% alumina. nAdc 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. REM : Thermal Clad is a trademark of the Bergquist Company. Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 MMBT2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = –0.1 mAdc, VCE = –10 Vdc) hFE MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A VCE(sat) — — VBE(sat) — — –1.3 –2.6 –0.4 –1.6 Vdc 35 75 50 100 75 100 — 100 30 50 — — — — — — — 300 — — Vdc — (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –150 mAdc, VCE = –10 Vdc) (3) (IC = –500 mAdc, VCE = –10 Vdc) (3) Collector – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) Base – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (3),(4) (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) fT 200 Cobo — Cibo — 30 8.0 pF — pF MHz SWITCHING CHARACTERISTICS Turn–On Time Delay Time Rise Time Turn–Off Time Storage Time Fall Time (VCC = –6.0 Vdc IC = –150 mAdc 6 0 Vdc, 150 mAdc, IB1 = IB2 = –15 mAdc) 15 mAdc) (VCC = –30 Vdc, IC = –150 mAdc 30 Vdc 150 mAdc, IB1 = –15 mAdc) 15 mAdc) ton td tr toff ts tf — — — — — — 45 10 40 100 80 30 ns ns 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 –16 V 200 ns 50 1.0 k INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 –30 V 200 ns v v –30 V 200 +15 V –6.0 V 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1.0 k 1.0 k 50 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 MMBT2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor TYPICAL CHARACTERISTICS 3.0 2.0 hFE , Normalized Current Gain VCE = –1.0 V VCE = –10 V TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 –0.1 – 55°C –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 I C, Collector Current (mA) Figure 3. DC Current Gain –1.0 VCE , Collector–Emitter Voltage (V) –0.8 IC = –1.0 mA –0.6 –10 mA –100 mA –500 mA –0.4 –0.2 0 –0.005 –0.01 –0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 I B, Base Current (mA) –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 Figure 4. Collector Saturation Region 300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, Collector Current tr 500 VCC = –30 V IC/IB = 10 TJ = 25°C t, Time (ns) 300 200 tf 100 70 50 30 20 2.0 V –200 –300 –500 10 7.0 5.0 –5.0 –7.0 –10 t′s = ts – 1/8 tf VCC = –30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, Time (ns) –20 –30 –50 –70 –100 I C, Collector Current (mA) –200 –300 –500 Figure 5. Turn–On Time Figure 6. Turn–Off Time http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 MMBT2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor TYPICAL SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 f = 1.0 kHz 8.0 NF, Noise Figure (dB) IC = –1.0 mA, Rs = 430 Ω –500 µA, Rs = 560 Ω –50 µA, Rs = 2.7 kΩ –100 µA, Rs = 1.6 kΩ Rs = OPTIMUM SOURCE RESISTANCE NF, Noise Figure (dB) 8.0 6.0 6.0 4.0 4.0 IC = –50 µA –100 µA –500 µA –1.0 mA 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 f, Frequency (kHz) 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k R s, Source Resistance (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 f T, Current–Gain — Bandwidth Product (MHz) 20 Ceb 400 300 200 C, Capacitance (pF) 10 7.0 5.0 3.0 2.0 –0.1 Ccb 100 80 60 40 30 20 –1.0 –2.0 VCE = –20 V TJ = 25°C –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –5.0 –10 –20 –50 –100 –200 –500 –1000 Reverse Voltage (VOLTS) I C, Collector Current (mA) Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product –1.0 TJ = 25°C –0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V Coefficient (mV/ ° C) +0.5 0 RqVC for VCE(sat) –0.5 –1.0 –1.5 –2.0 VCE(sat) @ IC/IB = 10 –2.5 –0.1 –0.2 –0.5 –1.0 –2.0 RqVB for VBE –0.6 V, Voltage (V) –0.4 –0.2 0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 I C, Collector Current (mA) –50 –100 –200 –500 –5.0 –10 –20 –50 –100 –200 –500 I C, Collector Current (mA) Figure 11. “On” Voltage http://www.SeCoSGmbH.com Figure 12. Temperature Coefficients Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4