MMBT2907AW

MMBT2907AW Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free PNP Silicon General Purpose Transistor SOT-323 FEATURE    Complementary NPN Type Available(MMBT2222AW) Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching K A 3 L 3 Top View 1 2 CB 1 2 E D COLLECTOR MARKING CODE MMBT2907AW = K3F, 20 1 BASE 3 F REF. A B C D E F G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 H REF. G H J K L J Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. 2 EMITTER ABSOLUTE MAXIMUM RATINGS at Ta = 25°C PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC PD TJ, TSTG RATINGS -60 -60 -5 -600 200 +150, -55 ~ +150 UNIT V V V mA mW ℃ ELECTRICAL CHARACTERISTICS at Ta = 25°C CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter=Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current TEST CONDITION IC=-10μA, IE=0 IC = -10 mA, IB = 0 IE=-10μA, IC=0 VCB=-50V, IE=0 VEB=-30V, IB=0 VEB=-3V, IC=0 VCE=-10V, IC=-0.1mA VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-150mA VCE=-10V, IC=-500mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA VCE=-20V, IC=-50mA, f=100MHz VCB=-10V, IE=0, f=0.1MHz VEB=-2V, IC=0, f=0.1MHz Vcc=-30V, VBE(Off)=-1.5V IC=-150mA, IB1=-15mA Vcc=-30V, IC=-150mA IB1=- IB2 =-15mA SYMBOL BVCBO BVCEO BVEBO ICBO ICES IEBO hFE1 hFE2 hFE3 hFE4 hFE5 VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT Cobo Cib Td Tr TS TF MIN. -60 -60 -5 MAX. UNIT V V V -100 -100 -100 75 100 100 100 50 -0.6 200 8 30 10 40 80 30 nA nA nA DC Current Gain 300 -0.4 -1.6 -1.3 -2.6 V V V V MHz pF pF nS nS nS nS Collector-emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance Input Capacitance Delay Time Rise Time Storage Time Fall Time 20-Oct-2009 Rev. C Page 1 of 3 MMBT2907AW Elektronische Bauelemente PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES 20-Oct-2009 Rev. C Page 2 of 3 MMBT2907AW Elektronische Bauelemente PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES 20-Oct-2009 Rev. C Page 3 of 3