MMBT2907FW

MMBT2907FW Elektronische Bauelemente PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free A SOT-523 L 3 3 FEATURES    Epitaxial Planar Die Construction Complementary NPN Type Available(MMBT2222FW) Ideal for Medium Power Amplification and Switching MMBT2907FW = 2F  Base Top View 1 2 CB 1 2 Collector K E D  MARKING CODE  F REF. G Millimeter Min. Max. 1.50 1.70 1.45 1.75 0.75 0.85 0.70 0.90 0.90 1.10 0.25 0.33 H REF. G H J K L Millimeter Min. Max. 0.00 0.15 0.28 0.40 0.10 0.20 0.75 0.85 J  Emitter MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissapation FR-5 Board TA=25℃ Thermal Resistance, Junction to Ambient Junction & Storage Temperature (1) A B C D E F SYMBOL VCEO VCBO VEBO IC PD RθJA TJ, TSTG RATINGS -60 -60 -5.0 -600 150 833 -55 ~ +150 UNIT Vdc Vdc Vdc mAdc mW ℃/W ℃ ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current TEST CONDITIONS OFF CHARACTERISTICS (2) IC = -10mAdc, IB = 0 IC = -10 µAdc, IE = 0 IE = -10 µAdc, IC = 0 VCB =-50 Vdc, IE = 0 VEB = -4 Vdc, IC = 0 ON CHARACTERISTICS IC =-0.1mAdc, VCE = -10 Vdc IC =-1.0mAdc, VCE = -10 Vdc IC =-10mAdc, VCE = -10 Vdc IC =-150mAdc, VCE = -10 Vdc IC =-500mAdc, VCE = -10 Vdc IC =-150mAdc, IB = -15 mAdc IC =-500mAdc, IB = -50 mAdc IC =-150mAdc, IB = -15 mAdc IC =-500mAdc, IB = -50 mAdc SMALL SIGNAL CHARACTERISTICS VCE = -12Vdc, IC=-2.0mAdc,f=30MHz VCB = -12 Vdc, IE = 0, f=1MHz SWITCHING CHARACTERISTICS VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO MIN. -60 -60 -5 75 100 100 100 50 - MAX. -10 -10 UNIT Vdc Vdc Vdc nAdc nAdc DC Current Gain hFE 300 -0.4 -1.6 -1.3 -2.6 Vdc Vdc Vdc Vdc MHz pF nS nS nS nS nS nS Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Curren-Gain-Bandwidth Product Output capacitance Turn-On Time Delay Time VCE(sat) VBE(sat) FT CoBO Ton Td Tr ToFF TS TF 140 5.0 45 10 40 100 80 30 Rise Time Turn-Out Time VCC =-60 Vdc, IC = -150mAdc, Storage Time IB1= IB2 =-15 mAdc Fall Time Note:1.FR-5=1.0x0.75x0.062 in 2.Pulse Test: Pulse Width=300μ S, Duty Cycle≦ 2.0% http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Oct-2009 Rev. B Page 1 of 3 MMBT2907FW Elektronische Bauelemente PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Oct-2009 Rev. B Page 2 of 3 MMBT2907FW Elektronische Bauelemente PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Oct-2009 Rev. B Page 3 of 3