MMBT2907Q

MMBT2907Q Elektronische Bauelemente RoHS Compliant Product D D1 PNP Silicon General Purpose Transistor * Features A SOT-89 E1 b1 1 Power dissipation PCM : 1.25 W (Temp.= 25 C) Collector current ICM : -0.6 A Collector-base voltage V(BR)CBO : -60 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O O 2 3 L e e1 b E C 1 .B AS E 2.C OLLE C T OR 3.E MIT T E R ３ Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Millimeters Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 Electrical Characteristics( Tamb=25OC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) DC current gain hFE(3) hFE(4) hFE(5) Collector-emitter saturation voltage VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 Test conditions IE=0 MIN -60 -60 -5 -0. 01 -0. 01 75 100 100 100 50 -0.4 -1.6 -1.3 -2.6 200 V V V V MHz 300 MAX UNIT V V V Ic= -10μA， Ic= -10mA， IB=0 IE=-10μA， IC=0 VCB=-50 V , IE=0 VEB= -3V , IC=0 μA μA VCE=-1V, IC= -0.1mA VCE=-1V, IC= -1mA VCE=-1V, IC=-10mA VCE=-2V, IC= -150mA VCE=-2V, IC=-500mA IC=-150 mA, IB=-15mA IC=-500 mA, IB=- 50mA IC=-150 mA, IB=-15mA IC=-500 mA, IB= -50mA VCE=-20V, IC= -50mA Base-emitter saturation voltage Transition frequency fT Cob Cib td tr tS tf f=100MHz VCB=-10V, IE= 0 Output Capacitance f=1MHz VEB=-2V, IC= 0 8 pF Input Capacitance Delay time Rise time Storage time Fall time http://www.SeCoSGmbH.com f=1MHz VCC=-30V, IC=-150mA,IB1=-15mA IC=-150mA IB1= IB2= -15mA 30 12 30 300 65 pF nS nS nS nS Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 MMBT2907Q Elektronische Bauelemente PNP Silicon General Purpose Transistor TYPICAL CHARACTERISTICS 3.0 2.0 hFE , Normalized Current Gain VCE = –1.0 V VCE = –10 V TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 –0.1 – 55°C –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 I C, Collector Current (mA) Figure 3. DC Current Gain –1.0 VCE , Collector–Emitter Voltage (V) –0.8 IC = –1.0 mA –0.6 –10 mA –100 mA –500 mA –0.4 –0.2 0 –0.005 –0.01 –0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 I B, Base Current (mA) –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 Figure 4. Collector Saturation Region 300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, Collector Current tr 500 VCC = –30 V IC/IB = 10 TJ = 25°C t, Time (ns) 300 200 tf 100 70 50 30 20 2.0 V –200 –300 –500 10 7.0 5.0 –5.0 –7.0 –10 t′s = ts – 1/8 tf VCC = –30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, Time (ns) –20 –30 –50 –70 –100 I C, Collector Current (mA) –200 –300 –500 Figure 5. Turn–On Time Figure 6. Turn–Off Time http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 MMBT2907Q Elektronische Bauelemente PNP Silicon General Purpose Transistor TYPICAL SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 f = 1.0 kHz 8.0 NF, Noise Figure (dB) IC = –1.0 mA, Rs = 430 Ω –500 µA, Rs = 560 Ω –50 µA, Rs = 2.7 kΩ –100 µA, Rs = 1.6 kΩ Rs = OPTIMUM SOURCE RESISTANCE NF, Noise Figure (dB) 8.0 6.0 6.0 4.0 4.0 IC = –50 µA –100 µA –500 µA –1.0 mA 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 f, Frequency (kHz) 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k R s, Source Resistance (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 f T, Current–Gain — Bandwidth Product (MHz) 20 Ceb 400 300 200 C, Capacitance (pF) 10 7.0 5.0 3.0 2.0 –0.1 Ccb 100 80 60 40 30 20 –1.0 –2.0 VCE = –20 V TJ = 25°C –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –5.0 –10 –20 –50 –100 –200 –500 –1000 Reverse Voltage (VOLTS) I C, Collector Current (mA) Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product –1.0 TJ = 25°C –0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V Coefficient (mV/ ° C) +0.5 0 RqVC for VCE(sat) –0.5 –1.0 –1.5 –2.0 VCE(sat) @ IC/IB = 10 –2.5 –0.1 –0.2 –0.5 –1.0 –2.0 RqVB for VBE –0.6 V, Voltage (V) –0.4 –0.2 0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 I C, Collector Current (mA) –50 –100 –200 –500 –5.0 –10 –20 –50 –100 –200 –500 I C, Collector Current (mA) Figure 11. “On” Voltage http://www.SeCoSGmbH.com Figure 12. Temperature Coefficients Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3