MMBT3904

MMBT3904 Elektronische Bauelemente 200 mA, 40 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES   Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. SOT-23 APPLICATION  General switching and amplification. A 3 L 3 Top View 1 2 CB 1 2 K E D PACKAGING DIMENSION F Collector G H J   Base REF. Millimeter Min. 2.80 2.25 1.20 0.90 1.80 0.30 Max. 3.00 2.55 1.40 1.15 2.00 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP.  Emitter A B C D E F MARKING ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation FR-5 Board , TA=25°C Total Device Dissipation FR-5 Board, Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate , TA=25°C Total Device Dissipation Alumina Substrate, Derate above 25°C Thermal Resistance, Junction to Ambien Junction, Storage Temperature (2) (1) SYMBOL VCEO VCBO VEBO IC PD RθJA PD RθJA TJ, TSTG RATINGS 40 60 6.0 200 225 1.8 556 300 2.4 417 -55 ~ +150 UNIT Vdc Vdc Vdc mAdc mW mW/°C °C / W mW mW/°C °C / W °C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Aug-2010 Rev. C Page 1 of 6 MMBT3904 Elektronische Bauelemente 200 mA, 40 V NPN Plastic Encapsulated Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(Continued) PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cut-Off Current Collector Cut-Off Current (3) SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX hFE(1) hFE(2) MIN. 40 60 6.0 40 70 100 60 30 0.65 300 1.0 0.5 100 1.0 - MAX. 50 50 (3) UNIT Vdc Vdc Vdc nAdc nAdc TEST CONDITIONS IC= 1mAdc, IB=0 IC = 10μAdc, IE = 0 IE = 10μAdc, IC=0 VCE= 30Vdc, VEB= 3.0Vdc VCE= 30Vdc, VEB= 3.0Vdc IC= 0.1mAdc, VCE= 1Vdc IC= 1.0mAdc, VCE= 1Vdc IC= 10mAdc, VCE= 1Vdc IC= 50mAdc, VCE= 1Vdc IC= 100mAdc, VCE= 1Vdc IC= 10mAdc, IB =1mAdc IC = 50mAdc, IB = 5mAdc IC= 10mAdc, IB =1mAdc IC = 50mAdc, IB =5mAdc IC= 10mAdc, VCE= 20Vdc, f=100MHz VCB=5.0Vdc, IE=0, f=1.0MHz VEB= 0.5Vdc, IC=0, f=1.0MHz VCE= 10 Vdc, IC= 1.0mAdc, f=1.0kHz OFF CHARACTERISTICS ON CHARACTERISTICS - DC Current Gain hFE(3) hFE(4) hFE(5) 300 0.2 0.3 0.85 0.95 4.0 8.0 10 8.0 400 40 5.0 Vdc Vdc Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (3) (3) VCE(sat) VBE(sat) SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product Output Capacitance Input Capacitance Input Impedance Voltage Feedback Radio Small-Signal Current Gain Output Admittance Noise Figure fT Cobo Cibo hie hre hfe Hoe NF MHz pF pF kΩ x 10 -4 VCE= 10 Vdc, IC= 1.0mAdc, f=1.0kHz VCE= 10 Vdc, IC= 1.0mAdc, f=1.0kHz μmhos VCE= 10 Vdc, IC= 1.0mAdc, f=-1.0kHz dB VCE= 5.0 Vdc, IC= 100μAdc, RS=1.0KΩ, f=1.0kHz VCC=3Vdc,VBE=-0.5Vdc nS IC=10mAdc, IB1 =1mAdc VCC=3Vdc, IC=10mAdc,IB1= IB2=1mAdc SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time NOTE: 1. 2. 3. FR-5=1.0 x 0.75 x 0.062 in. Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. Pulse Test: Pulse Width ≦ 300μS, Duty Cycle ≦ 2.0% td tr ts tf 35 35 200 50 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Aug-2010 Rev. C Page 2 of 6 MMBT3904 Elektronische Bauelemente 200 mA, 40 V NPN Plastic Encapsulated Transistor http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Aug-2010 Rev. C Page 3 of 6 MMBT3904 Elektronische Bauelemente 200 mA, 40 V NPN Plastic Encapsulated Transistor TYPICAL TRANSIENT CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Aug-2010 Rev. C Page 4 of 6 MMBT3904 Elektronische Bauelemente 200 mA, 40 V NPN Plastic Encapsulated Transistor http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Aug-2010 Rev. C Page 5 of 6 MMBT3904 Elektronische Bauelemente 200 mA, 40 V NPN Plastic Encapsulated Transistor http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Aug-2010 Rev. C Page 6 of 6