MMBT3904FW

MMBT3904FW NPN Silicon Elektronische Bauelemente RoHS Compliant Product General Purpose Transistor FEATURES SOT-523 A L · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906FW) Ideal for Medium Power Amplification and Switching COLLECTOR Dim A B BS Min 1.500 0.750 0.700 0.250 0.900 0.000 0.100 0.220 0.400 1.500 0.200 Max 1.700 0.850 0.900 0.350 1.100 0.100 0.200 0.500 0.600 1.700 0.400 Top View C D G H 3 1 BASE 3 1 2 SOT-523 V G C D H K J J K L S V 2 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc All Dimension in mm THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient(1) Total Device Dissipation(2) Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient(2) Junction and Storage Temperature Symbol PD Max 200 1.6 RqJA PD 600 300 2.4 RqJA TJ, Tstg 400 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT3904FW = 1N, AM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. FR– 4 = Minimum Pad 2. Alumina = 1.0 1.0 Inch Pad. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc  http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 6 MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(3) DC Current Gain (1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) HFE 40 70 100 60 30 VCE(sat) — — VBE(sat) 0.65 — 0.85 0.95 0.2 0.3 Vdc — — 300 — — Vdc — SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Small – Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 300 — — 1.0 0.5 100 1.0 — — 4.0 8.0 10 8.0 400 40 5.0 MHz pF pF k ohms X 10– 4 — mmhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ( (VCC = 3.0 Vdc, VBE = – 0.5 Vdc, , , IC = 10 mAdc, IB1 = 1.0 mAdc) ( (VCC = 3.0 Vdc, , IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) td tr ts tf — — — — 35 ns 35 200 ns 50 v 300 ms, Duty Cycle v 2.0%. http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 6 MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor Duty Cycle = 2% 300 ns +3 V +10.9 V 10 k 275 10 < t1 < 500 ms Duty Cycle = 2% t1 +3 V +10.9 V 275 10 k 0 – 0.5 V < 1 ns CS < 4 pF* – 9.1 V′ < 1 ns 1N916 CS < 4 pF* * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 7.0 5.0 Capacitance (pF) Cibo 3.0 2.0 Cobo Q, Charge (pC) 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 Reverse Bias Voltage (V) I C, Collector Current (mA) Figure 3. Capacitance Figure 4. Charge Data http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 6 MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor 500 300 200 100 70 50 30 20 10 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 I C, Collector Current (mA) 2.0 V 50 70 100 200 40 V 15 V IC/IB = 10 500 300 200 t r , Rise Time (ns) 100 70 50 30 20 10 7 5 VCC = 40 V IC/IB = 10 Time (ns) tr @ VCC = 3.0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) Figure 5. Turn – On Time 500 300 200 ts , Storage Time (ns) ′ 100 70 50 30 20 10 7 5 IC/IB = 20 IC/IB = 10 IC/IB = 20 IC/IB = 10 500 300 200 Figure 6. Rise Time t′s = ts – 1/8 tf IB1 = IB2 t f , Fall Time (ns) VCC = 40 V IB1 = IB2 IC/IB = 20 100 70 50 30 20 10 7 5 IC/IB = 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) I C, Collector Current (mA) Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 10 NF, Noise Figure (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A SOURCE RESISTANCE = 200 IC = 1.0 mA 14 f = 1.0 kHz 12 NF, Noise Figure (dB) IC = 1.0 mA W W SOURCE RESISTANCE = 200 IC = 0.5 mA 10 8 6 4 IC = 0.5 mA IC = 50 mA IC = 100 mA SOURCE RESISTANCE = 1.0 k IC = 50 A m m W 4.0 10 20 40 100 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.2 0.4 1.0 2.0 f, Frequency (kHz) R S, Source Resistance (k OHMS) Figure 9. http://www.SeCoSGmbH.com Figure 10. Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 6 MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 hoe , Output Admittance ( m mhos) 5.0 10 100 50 200 h fe , Current Gain 20 10 5 100 70 50 2 30 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 10 Figure 11. Current Gain 20 h re , Voltage Feeback Ratio (X 10 –4) 10 h ie , Input Impedance (k OHMS) 5.0 10 7.0 5.0 3.0 2.0 Figure 12. Output Admittance 2.0 1.0 0.5 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 10 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 10 Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C h FE, DC Current Gain (Normalized) 1.0 0.7 0.5 0.3 0.2 – 55°C +25°C VCE = 1.0 V 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) Figure 15. DC Current Gain http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 6 MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor 1.0 TJ = 25°C VCE , Collector Emitter Voltage (V) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I B, Base Current (mA) Figure 16. Collector Saturation Region 1.2 TJ = 25°C 1.0 0.8 V, Voltage (V) VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 VBE(sat) @ IC/IB =10 Coefficient (mV/ °C) 1.0 0.5 +25°C TO +125°C qVC FOR VCE(sat) 0 – 0.5 – 55°C TO +25°C – 1.0 +25°C TO +125°C – 1.5 – 2.0 – 55°C TO +25°C qVB FOR VBE(sat) 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 I C, Collector Current (mA) I C, Collector Current (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. 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