MMBT3904W

MMBT3904W Elektronische Bauelemente RoHS Compliant Product NPN Silicon General Purpose Transistor FEATURES A suffix of "-C" specifies halogen & lead-free SOT-323(SC-70) A L 3 · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906W) Ideal for Medium Power Amplification and Switching COLLECTOR Dim A B BS 2 Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 Top View 1 C D G H J K J 3 3 1 SC-70 V G C 1 BASE 2 2 EMITTER SOT-323 D H K L S V MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc All Dimension in mm THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.6 RqJA PD 625 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT3904W = 1A, K2N ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc    REM : Thermal Clad is a registered trademark of the Berquist Company. v v http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2007 Rev. B Page 1 of 6 MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(3) DC Current Gain (1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) HFE 40 70 100 60 30 — — 0.65 — — — 300 — — 0.2 0.3 0.85 0.95 — VCE(sat) Vdc VBE(sat) Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Small – Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 300 — — 1.0 0.5 100 1.0 — — 4.0 8.0 10 8.0 400 40 5.0 MHz pF pF k ohms X 10– 4 — mmhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ( (VCC = 3.0 Vdc, VBE = – 0.5 Vdc, , , IC = 10 mAdc, IB1 = 1.0 mAdc) ( (VCC = 3.0 Vdc, , IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) td tr ts tf — — — — 35 35 200 50 ns ns v 300 ms, Duty Cycle v 2.0%. http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2007 Rev. B Page 2 of 6 MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor Duty Cycle = 2% 300 ns +3 V +10.9 V 10 k 275 10 < t1 < 500 ms t1 +3 V +10.9 V 10 k 1N916 CS < 4 pF* 275 Duty Cycle = 2% 0 – 0.5 V < 1 ns CS < 4 pF* – 9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 7.0 5.0 Cibo Q, Charge (pC) 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10 Capacitance (pF) 3.0 2.0 Cobo 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 Reverse Bias Voltage (V) I C, Collector Current (mA) Figure 3. Capacitance Figure 4. Charge Data http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2007 Rev. B Page 3 of 6 MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor 500 300 200 100 70 50 30 20 10 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 I C, Collector Current (mA) IC/IB = 10 500 300 200 t r , Rise Time (ns) 100 70 50 30 20 10 200 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 VCC = 40 V IC/IB = 10 Time (ns) tr @ VCC = 3.0 V 40 V 15 V 2.0 V 50 70 100 I C, Collector Current (mA) Figure 5. Turn – On Time 500 300 200 ts , Storage Time (ns) ′ 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 20 IC/IB = 10 500 300 200 t f , Fall Time (ns) 100 70 50 30 20 10 7 5 1.0 2.0 3.0 Figure 6. Rise Time t′s = ts – 1/8 tf IB1 = IB2 VCC = 40 V IB1 = IB2 IC/IB = 20 IC/IB = 20 IC/IB = 10 IC/IB = 10 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) I C, Collector Current (mA) Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 10 NF, Noise Figure (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 200 IC = 1.0 mA W W NF, Noise Figure (dB) 14 12 10 8 6 4 f = 1.0 kHz IC = 1.0 mA SOURCE RESISTANCE = 200 IC = 0.5 mA IC = 0.5 mA IC = 50 mA IC = 100 mA SOURCE RESISTANCE = 1.0 k IC = 50 A m SOURCE RESISTANCE = 500 IC = 100 A m W 4.0 10 20 40 100 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.2 0.4 1.0 2.0 f, Frequency (kHz) R S, Source Resistance (k OHMS) Figure 9. http://www.SeCoSGmbH.com Figure 10. Any changing of specification will not be informed individual 01-Jun-2007 Rev. B Page 4 of 6 MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 hoe , Output Admittance ( m mhos) 5.0 10 100 50 20 10 5 2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 10 200 h fe , Current Gain 100 70 50 30 Figure 11. Current Gain 20 h re , Voltage Feeback Ratio (X 10 –4) 10 h ie , Input Impedance (k OHMS) 5.0 2.0 1.0 0.5 0.2 10 7.0 5.0 3.0 2.0 Figure 12. Output Admittance 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 10 Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio TYPICAL STATIC CHARACTERISTICS 2.0 h FE , DC Current Gain (Normalized) TJ = +125°C +25°C VCE = 1.0 V 1.0 0.7 0.5 0.3 0.2 – 55°C 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) Figure 15. DC Current Gain http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2007 Rev. B Page 5 of 6 MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor 1.0 VCE , Collector Emitter Voltage (V) TJ = 25°C 0.8 0.6 0.4 0.2 0 0.01 IC = 1.0 mA 10 mA 30 mA 100 mA 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I B, Base Current (mA) Figure 16. Collector Saturation Region 1.2 1.0 0.8 V, Voltage (V) TJ = 25°C 1.0 VBE(sat) @ IC/IB =10 Coefficient (mV/ °C) 0.5 0 – 0.5 – 1.0 – 1.5 – 55°C TO +25°C +25°C TO +125°C +25°C TO +125°C qVC FOR VCE(sat) – 55°C TO +25°C VBE @ VCE =1.0 V 0.6 0.4 0.2 0 1.0 2.0 5.0 10 20 50 100 200 VCE(sat) @ IC/IB =10 qVB FOR VBE(sat) 0 20 40 60 80 100 120 – 2.0 140 160 180 200 I C, Collector Current (mA) I C, Collector Current (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2007 Rev. 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