MMBT3906

MMBT3906 Elektronische Bauelemente -200 mA, -40 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES   Collector current capability IC=-200mA Collector-emitter voltage VCEO=-40V. SOT-23 APPLICATION  General switching and amplification. A 3 L 3 PACKAGING DIMENSION 1 Top View 2 CB 1 2 K Collector E D  F G H J  Base  Emitter Millimeter REF. A Min. 2.80 2.25 1.20 0.90 1.80 0.30 Max. 3.00 2.55 1.40 1.15 2.00 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. MARKING B C D E F ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation FR-5 Board , TA=25°C Total Device Dissipation FR-5 Board, Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate , TA=25°C Total Device Dissipation Alumina Substrate, Derate above 25°C Thermal Resistance, Junction to Ambien Junction, Storage Temperature (2) (1) SYMBOL VCEO VCBO VEBO IC PD RθJA PD RθJA TJ, TSTG RATINGS -40 -40 -5.0 -200 225 1.8 556 300 2.4 417 -55 ~ +150 UNIT Vdc Vdc Vdc mAdc mW mW/°C °C / W mW mW/°C °C / W °C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Aug-2010 Rev. D Page 1 of 5 MMBT3906 Elektronische Bauelemente -200 mA, -40 V PNP Plastic Encapsulated Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cut-Off Current Collector Cut-Off Current (3) SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX hFE(1) hFE(2) MIN. -40 -40 -5.0 60 80 100 60 30 -0.65 250 2.0 0.1 100 3.0 - MAX. -50 -50 (3) UNIT Vdc Vdc Vdc nAdc nAdc TEST CONDITIONS IC= -1mAdc, IB=0 IC = -10μAdc, IE = 0 IE = -10μAdc, IC=0 VCE= -30Vdc, VEB= -3.0Vdc VCE= -30Vdc, VEB= -3.0Vdc IC= -0.1mAdc, VCE= -1Vdc IC= -1.0mAdc, VCE= -1Vdc IC= -10mAdc, VCE= -1Vdc IC= -50mAdc, VCE= -1Vdc IC= -100mAdc, VCE= -1Vdc IC= -10mAdc, IB = -1mAdc IC = -50mAdc, IB = -5mAdc IC= -10mAdc, IB = -1mAdc IC = -50mAdc, IB = -5mAdc IC= -10mAdc, VCE= -20Vdc, f=100MHz VCB= -5.0Vdc, IE=0, f=1.0MHz VEB= -0.5Vdc, IC=0, f=1.0MHz VCE= -10 Vdc, IC= -1.0mAdc, f=1.0kHz OFF CHARACTERISTICS ON CHARACTERISTICS - DC Current Gain hFE(3) hFE(4) hFE(5) 300 -0.25 -0.4 -0.85 -0.95 4.5 10 12 10 400 60 4.0 Vdc Vdc Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (3) (3) VCE(sat) VBE(sat) SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product Output Capacitance Input Capacitance Input Impedance Voltage Feedback Radio Small-Signal Current Gain Output Admittance Noise Figure fT Cobo Cibo hie hre hfe Hoe NF MHz pF pF kΩ x 10 -4 VCE= -10 Vdc, IC= 1.0mAdc, f=1.0kHz VCE= -10 Vdc, IC= 1.0mAdc, f=1.0kHz μmhos VCE= -10 Vdc, IC= 1.0mAdc, f=-1.0kHz dB VCE= -5.0 Vdc, IC= -100μAdc, RS=1.0KΩ, f=1.0kHz VCC=-3Vdc,VBE=0.5Vdc nS IC=-10mAdc, IB1 =-1mAdc VCC=-3Vdc, IC=-10mAdc,IB1= IB2=-1mAdc SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time NOTE: 1. 2. 3. FR-5=1.0 x 0.75 x 0.062 in. Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. Pulse Test: Pulse Width ≦ 300μS, Duty Cycle ≦ 2.0% td tr ts tf 35 35 225 75 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Aug-2010 Rev. D Page 2 of 5 MMBT3906 Elektronische Bauelemente -200 mA, -40 V PNP Plastic Encapsulated Transistor http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Aug-2010 Rev. D Page 3 of 5 MMBT3906 Elektronische Bauelemente -200 mA, -40 V PNP Plastic Encapsulated Transistor http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Aug-2010 Rev. D Page 4 of 5 MMBT3906 Elektronische Bauelemente -200 mA, -40 V PNP Plastic Encapsulated Transistor http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Aug-2010 Rev. D Page 5 of 5