MMBT3906FW

MMBT3906FW PNP Silicon Elektronische Bauelemente FEATURES RoHS Compliant Product General Purpose Transistor · · · Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904FW) Ideal for Medium Power Amplification and Switching SOT-523 A L Dim A B BS Min 1.500 0.750 0.700 0.250 0.900 0.000 0.100 0.220 0.400 1.500 0.200 Max 1.700 0.850 0.900 0.350 1.100 0.100 0.200 0.500 0.600 1.700 0.400 Top View C D G H COLLECTOR 3 1 BASE 3 1 V G C J K J 2 SOT-523 D H K L S V 2 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –40 –40 –5.0 –200 Unit Vdc Vdc Vdc mAdc All Dimension in mm THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 4 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.6 RqJA PD 600 300 2.4 RqJA TJ, Tstg 400 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT3906FW = 3N, 2A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Base Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) Collector Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) 1. FR– 4 = Minimum Pad 2. Alumina = 1.0 1.0 inchs. 99.5% alumina. V(BR)CEO –40 V(BR)CBO –40 V(BR)EBO –5.0 IBL — ICEX — –50 –50 nAdc — nAdc — Vdc — Vdc Vdc  REM : Thermal Clad is a trademark of the Bergquist Company. http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 MMBT3906FW PNP Silicon Elektronische Bauelemente General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(3) DC Current Gain (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) HFE 60 80 100 60 30 VCE(sat) — — VBE(sat) –0.65 — –0.85 –0.95 –0.25 –0.4 Vdc — — 300 — — Vdc — SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Small – Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Output Admittance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Noise Figure (IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) fT 250 Cobo — Cibo — hie 2.0 hre 0.1 hfe 100 hoe 3.0 NF — 4.0 60 dB 400 10 — 12 X 10– 4 10 kΩ 4.5 pF — pF MHz mmhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width (VCC = –3.0 Vdc, VBE = 0.5 Vdc, IC = –10 mAdc, IB1 = –1.0 mAdc) (VCC = –3.0 Vdc, IC = –10 mAdc, IB1 = IB2 = –1.0 mAdc) td tr ts tf — — — — 35 ns 35 225 ns 75 v 300 ms, Duty Cycle v 2.0%. 3V 275 3V +9.1 V < 1 ns 275 10 k 0 CS < 4 pF* 1N916 10 < t1 < 500 ms Duty Cycle = 2% t1 10.9 V CS < 4 pF* < 1 ns +0.5 V 10 k 10.6 V 300 ns Duty Cycle = 2% * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit http://www.SeCoSGmbH.com Figure 2. Storage and Fall Time Equivalent Test Circuit Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 MMBT3906FW PNP Silicon Elektronische Bauelemente General Purpose Transistor TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 7.0 Capacitance (pF) 5.0 Cobo Cibo 3.0 2.0 Q, Charge (pC) 5000 3000 2000 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Reverse Bias (V) 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) 200 Figure 3. Capacitance 500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200 Figure 4. Charge Data VCC = 40 V IB1 = IB2 IC/IB = 20 t f , Fall Time (ns) 100 70 50 30 20 10 7 5 IC/IB = 10 Time (ns) tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) Figure 5. Turn – On Time Figure 6. Fall Time http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 MMBT3906FW PNP Silicon Elektronische Bauelemente General Purpose Transistor TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 5.0 SOURCE RESISTANCE = 200 IC = 1.0 mA 4.0 NF, Noise Figure (dB) SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 W NF, Noise Figure (dB) 12 f = 1.0 kHz IC = 1.0 mA IC = 0.5 mA 8 6 4 2 0 10 W SOURCE RESISTANCE = 2.0 k IC = 50 A m 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 A 1.0 m m IC = 100 mA IC = 50 A 0.1 0.2 0.4 1.0 2.0 4.0 10 20 R g, Source Resistance (k OHMS) 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 f, Frequency (kHz) 20 40 100 Figure 7. Figure 8. h PARAMETERS (VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 h oe, Output Admittance ( mhos) 100 70 50 30 20 200 h fe , DC Current Gain 100 70 50 m 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 7.0 10 5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 I C, Collector Current (mA) 3.0 5.0 7.0 10 Figure 9. Current Gain 20 h re , Voltage Feedback Ratio (X 10 –4 ) 10 h ie , Input Impedance (k OHMS) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 7.0 5.0 3.0 2.0 Figure 10. Output Admittance 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 I C, Collector Current (mA) 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 7.0 10 Figure 11. Input Impedance http://www.SeCoSGmbH.com Figure 12. Voltage Feedback Ratio Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 MMBT3906FW PNP Silicon Elektronische Bauelemente General Purpose Transistor TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C +25°C – 55°C VCE = 1.0 V h FE, DC Current Gain (Normalized) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 I C, Collector Current (mA) 10 20 30 50 70 100 200 Figure 13. DC Current Gain 1.0 TJ = 25°C VCE , Collector Emitter Voltage (V) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 I B, Base Current (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14. Collector Saturation Region 1.0 1.0 q V, Temperature Coefficients (mV/ °C) TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.5 0 – 0.5 qVC FOR VCE(sat) +25°C TO +125°C – 55°C TO +25°C +25°C TO +125°C V, Voltage (V) 0.6 0.4 VCE(sat) @ IC/IB = 10 – 1.0 – 1.5 – 2.0 – 55°C TO +25°C 0.2 qVB FOR VBE(sat) 0 1.0 2.0 5.0 50 10 20 I C, Collector Current (mA) 100 200 0 20 40 60 80 100 120 140 I C, Collector Current (mA) 160 180 200 Figure 15. “ON” Voltages Figure 16. Temperature Coefficients http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5