MMBT3906T

MMBT3906T Elektronische Bauelemente PNP Silicon General Purpose Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES   Simplifies Circuit Design. We Declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device MMBT3906T Marking 2A Shipping 3000/Tape&Reel REF. A B C D G J Millimeter Min. Max. 1.50 1.70 0.75 0.95 0.60 0.80 0.23 0.33 0.50BSC 0.10 0.20 REF. K M N S Millimeter Min. Max. 0.30 0.50 o --10 o --10 1.50 1.70 MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissapation FR-4 Board(1) TA=25℃, Derate above 25℃ Thermal Resistance, Junction to Ambient Total Device Dissapation FR-4 Board(2) TA=25℃, Derate above 25℃ Thermal Resistance, Junction to Ambient Junction & Storage Temperature 1. 2. 3. FR-4 Minimum Pad. FR-4 1.0 X 1.0 Inch Pad. Pulse Test：Pulse Width ≦ 300 µs, Duty Cycle ≦ 2.0％. SYMBOL VCEO VCBO VEBO IC PD RθJA PD RθJA TJ, TSTG RATINGS -40 -40 -5.0 -200 200 1.6 600 300 2.4 400 -55 ~ 150 UNIT Vdc Vdc Vdc mAdc mW mW/℃ ℃/W mW mW/℃ ℃/W ℃ DEVICE MARKING MMBT3906T = 2A http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Apr-2010 Rev. A Page 1 of 5 MMBT3906T Elektronische Bauelemente PNP Silicon General Purpose Transistors ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) CHARACTERISTIC Collector-Emitter Breakdown Voltage(3) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL MIN. MAX. UNIT TEST CONDITIONS IC = -1.0 mAdc, IB = 0 IC = -10 µAdc, IE = 0 IE = -10 µAdc, IC = 0 VCE = -30 Vdc, VEB = -3.0 Vdc VCE = -30 Vdc, VBE = -3.0 Vdc IC = -0.1 mAdc, VCE = -1.0 Vdc IC = -1.0 mAdc, VCE = -1.0 Vdc IC = -10 mAdc, VCE = -1.0 Vdc IC = -50 mAdc, VCE = -1.0 Vdc IC = -100 mAdc, VCE = -1.0 Vdc IC = -10 mAdc, IB = -1.0 mAdc IC = -50 mAdc, IB = -5.0 mAdc IC = -10 mAdc, IB = -1.0 mAdc IC = -50 mAdc, IB = -5.0 mAdc Off Characteristics V(BR)CEO Vdc -40 V(BR)CBO Vdc -40 V(BR)EBO Vdc -5.0 IBL -50 nAdc ICEX -50 nAdc On Characteristics(3) 60 80 hFE 100 300 60 30 -0.25 VCE(sat) Vdc -0.4 -0.65 -0.85 VBE(sat) Vdc -0.95 Small-Signal Characteristics fT 250 MHz DC Current Gain(1) Collector-Emitter Saturation Voltage(3) Base-Emitter Saturation Voltage(3) Curren-Gain-Bandwidth Product Output Capacitance Input Capacitance Input Impedancen Voltage Feedback Ratio Small-Signal Current Gain Output Admittance Noise Figure Delay Time Rise Time Storage Time Fall Time 3. VCE = -20 Vdc, IC = -10 mAdc, f = 100 MHz Cobo 4.5 pF VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz Cibo 10 pF VBE = -0.5 Vdc, IE = 0, f = 1.0 MHz VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 hie 2.0 12 pF kHz VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 hre 0.1 10 X10-4 kHz VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 hfe 100 400 kHz V = -10 Vdc, IC = -1.0 mAdc, f = 1.0 *hoe 3.0 60 µmhos CE kHz VCE = -5.0 Vdc, IC = -100 µAdc, NF 4.0 dB RS = 1.0k f = 1.0 kHz Switching Characteristics Td 35 nS VCC = -3.0 Vdc, VBE = 0.5 Vdc, IC = -10 mAdc, IB1 = -1.0 mAdc Tr 35 nS TS 225 nS VCC = -3.0 Vdc, IC = -10 mAdc, IB1 = IB2 = -1.0 mAdc TF 75 nS Pulse Test：Pulse Width ≦ 300 μs, Duty Cycle≦ 2.0%. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Apr-2010 Rev. A Page 2 of 5 MMBT3906T Elektronische Bauelemente PNP Silicon General Purpose Transistors CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Apr-2010 Rev. A Page 3 of 5 MMBT3906T Elektronische Bauelemente PNP Silicon General Purpose Transistors CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Apr-2010 Rev. A Page 4 of 5 MMBT3906T Elektronische Bauelemente PNP Silicon General Purpose Transistors CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Apr-2010 Rev. A Page 5 of 5