MMBT4401W

MMBT4401W Elektronische Bauelemente RoHS Compliant Product NPN Silicon Switching Transistor A L COLLECTOR 3 Top View 1 BASE 1 3 SOT-323 Dim BS Min 1.800 1.150 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 A B C 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 V 2 EMITTER 2 G C D H K J D G H J K L S MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 600 Unit Vdc Vdc Vdc mAdc V All Dimension in mm THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.8 RqJA PD 556 200 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT4401W = K3X, 2X ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. V(BR)CEO 40 V(BR)CBO 60 V(BR)EBO 6.0 IBEV — ICEX — 0.1 0.1 µAdc — µAdc — Vdc — Vdc Vdc    http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 MMBT4401W Elektronische Bauelemente NPN Silicon Switching Transistor ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 20 40 80 100 40 VCE(sat) — — VBE(sat) 0.75 — 0.95 1.2 0.4 0.75 Vdc — — — 300 — Vdc — SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small – Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) fT 250 Ccb — Ceb — hie 1.0 hre 0.1 hfe 40 hoe 1.0 30 500 8.0 — 15 X 10– 4 30 kΩ 6.5 pF — pF MHz mmhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ( (VCC = 30 Vdc, VEB = 2.0 Vdc, , , IC = 150 mAdc, IB1 = 15 mAdc) ( (VCC = 30 Vdc, IC = 150 mAdc, , , IB1 = IB2 = 15 mAdc) td tr ts tf — — — — 15 ns 20 225 ns 30 v 300 ms, Duty Cycle v 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V +16 V 0 – 2.0 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1.0 kΩ < 2.0 ns 200 Ω +16 V 0 CS* < 10 pF –14 V < 20 ns 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1.0 kΩ + 30 V 200 Ω CS* < 10 pF – 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time Figure 2. Turn–Off Time http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 MMBT4401W Elektronische Bauelemente NPN Silicon Switching Transistor TRANSIENT CHARACTERISTICS 25°C 30 20 100°C 10 7.0 5.0 VCC = 30 V IC/IB = 10 QT Capacitance (pF) Q, Charge (nC) Ccb Cobo 10 7.0 5.0 3.0 2.0 0.1 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 QA 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 10 20 30 50 70 100 200 300 500 Reverse Voltage (V) IC, Collector Current (mA) Figure 3. Capacitances Figure 4. Charge Data 100 70 50 IC/IB = 10 100 70 tr 50 VCC = 30 V IC/IB = 10 t, Time (ns) t, Time (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 30 20 tf 10 7.0 5.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, Collector Current (mA) IC, Collector Current (mA) Figure 5. Turn–On Time Figure 6. Rise and Fall Times 300 200 ts′ = ts – 1/8 tf IB1 = IB2 IC/IB = 10 to 20 100 70 50 IC/IB = 20 VCC = 30 V IB1 = IB2 t s ', Storage Time (ns) tf', Fall Time (ns) 30 20 IC/IB = 10 100 70 50 10 7.0 30 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500 IC, Collector Current (mA) IC, Collector Current (mA) Figure 7. Storage Time http://www.SeCoSGmbH.com Figure 8. Fall Time Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 MMBT4401W Elektronische Bauelemente NPN Silicon Switching Transistor NOISE FIGURE VCE = 10 Vdc, TA = 25°C Bandwidth = 1.0 Hz 10 IC = 1.0 mA, RS = 150 Ω IC = 500 µA, RS = 200 Ω IC = 100 µA, RS = 2.0 kΩ IC = 50 µA, RS = 4.0 kΩ RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 SMALL–SIGNAL CHARACTERISTICS NF, Noise Figure (dB) NF, Noise Figure (dB) 8.0 6.0 6.0 IC = 50 µA IC = 100 µA IC = 500 µA IC = 1.0 mA 4.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 2.0 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, Frequency (kHz) RS, Source Resistance (OHMS) Figure 9. Frequency Effects Figure 10. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between selected from the MMBT4401W lines, and the same units hfe and other “h” parameters for this series of transistors. To were used to develop the correspondingly numbered curves obtain these curves, a high–gain and a low–gain unit were on each graph. 300 50 k MMBT4401W UNIT 1 MMBT4401W UNIT 2 hje, Input Impedance (OHMS) 200 20 k 10 k 5.0 k hfe, Current Gain 100 70 50 30 20 0.1 MMBT4401W UNIT 1 MMBT4401W UNIT 2 2.0 k 1.0 k 500 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, Collector Current (mA) IC, Collector Current (mA) Figure 11. Current Gain 10 100 Figure 12. Input Impedance hre, Voltage Feedback Ratio (X 10-4) hoe, Output Admittance (µ mhos) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 50 MMBT4401W UNIT 1 MMBT4401W UNIT 2 20 10 5.0 2.0 1.0 0.1 MMBT4401W UNIT 1 MMBT4401W UNIT 2 2.0 3.0 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, Collector Current (mA) IC, Collector Current (mA) Figure 13. Voltage Feedback Ratio http://www.SeCoSGmbH.com Figure 14. Output Admittance Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 MMBT4401W Elektronische Bauelemente NPN Silicon Switching Transistor STATIC CHARACTERISTICS 3.0 hFE, Normalized Current Gain 2.0 VCE = 1.0 V VCE = 10 V TJ = 125°C 1.0 0.7 0.5 0.3 0.2 0.1 25°C – 55°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, Collector Current (mA) Figure 15. DC Current Gain 1.0 Vce, Collector-Emitter Voltage (V) 0.8 TJ = 25°C 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IB, Base Current (mA) Figure 16. Collector Saturation Region 1.0 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 + 0.5 0 qVC for VCE(sat) Coefficient (mV/ ° C) Voltage (V) – 0.5 – 1.0 – 1.5 – 2.0 – 2.5 0.1 0.2 0.6 VBE @ VCE = 10 V 0.4 0.2 VCE(sat) @ IC/IB = 10 qVB for VBE 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, Collector Current (mA) IC, Collector Current (mA) Figure 17. “On” Voltages Figure 18. Temperature Coefficients http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5