MMBT4403

MMBT4403 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Silicon Switching Transistor SOT-23 Dim COLLECTOR Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 A L 3 A B C 2 3 1 BASE 1 Top View BS D G H J K L K J 3 2 EMITTER V 1 2 G C D H S V All Dimension in mm MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Parameter Value -40 -40 -5 -0.6 0.3 -55-150 Units V V V A W ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency unless Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) otherwise Test specified） MIN -40 -40 -5 -0.1 -0.1 -0.1 100 300 -0.4 -0.95 200 V V MHz MAX UNIT V V V μA μA μA conditions IE=0 IB=0 IC=0 IE=0 Ic=-100μA , IC= -1mA , IE=-100μA, VCB=-35V , VCE=-35 V , IB=0 VEB=-4V , VCE=-2 V, IC=0 IC= -150mA IC=-150 mA, IB=-15mA IC=- 150 mA, IB=-15mA VCE= -10V, IC= -20mA fT f = 100MHz MARKING: 2T http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 1 of 4 MMBT4403 Elektronische Bauelemente PNP Silicon Switching Transistor TRANSIENT CHARACTERISTICS 25°C 30 20 CAPACITANCE (pF) Ceb Q, CHARGE (nC) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 0.1 10 20 100°C VCC = 30 V IC/IB = 10 10 7.0 5.0 Ccb QT QA 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500 Figure 3. Capacitances Figure 4. Charge Data 100 70 50 t, TIME (ns) 30 20 t r , RISE TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10 100 70 50 30 20 VCC = 30 V IC/IB = 10 10 7.0 5.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6. Rise Time 200 IC/IB = 10 t s′, STORAGE TIME (ns) 100 70 50 IB1 = IB2 ts′ = ts − 1/8 tf 30 20 IC/IB = 20 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 2 of 4 MMBT4403 Elektronische Bauelemente PNP Silicon Switching Transistor SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 8 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 430 W IC = 500 mA, RS = 560 W IC = 50 mA, RS = 2.7 kW IC = 100 mA, RS = 1.6 kW NF, NOISE FIGURE (dB) 10 f = 1 kHz 8 6 6 4 2 4 IC = 50 mA 100 mA 500 mA 1.0 mA RS = OPTIMUM SOURCE RESISTANCE 2 0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 8. Frequency Effects Figure 9. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 255C This group of graphs illustrates the relationship between hfe and other ªhº parameters for this series of transistors. T o obtain these curves, a high-gain and a low-gain unit were selected from the MMBT4403 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 1000 700 500 hfe, CURRENT GAIN 300 200 MMBT4403 UNIT 1 MMBT4403 UNIT 2 hie , INPUT IMPEDANCE (OHMS) 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403 UNIT 1 MMBT4403 UNIT 2 100 70 50 30 0.1 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 10. Current Gain 20 hre , VOLTAGE FEEDBACK RATIO (X 10- 4 ) MMBT4403 UNIT 1 MMBT4403 UNIT 2 hoe, OUTPUT ADMITTANCE ( mhos) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 500 Figure 11. Input Impedance 100 50 20 10 5.0 2.0 1.00.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403 UNIT 1 MMBT4403 UNIT 2 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio http://www.SeCoSGmbH.com Figure 13. Output Admittance Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 3 of 4 MMBT4403 Elektronische Bauelemente PNP Silicon Switching Transistor STATIC CHARACTERISTICS 3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 0.1 −55 °C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 Figure 14. DC Current Gain VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 1.0 0.8 VOLTAGE (VOLTS) TJ = 25°C VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ °C) VBE(sat) @ VCE = 10 V 0.5 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2 qVS for VBE qVC for VCE(sat) 0.6 0.4 0.2 0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 Figure 16. “On” Voltages Figure 17. Temperature Coefficients http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 4 of 4