MMBT4403W

MMBT4403W Elektronische Bauelemente RoHS Compliant Product PNP Silicon Switching Transistor A L COLLECTOR 3 Top View 1 BASE 1 3 SOT-323 Dim A BS Min 1.800 1.150 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 B C D G H J K J 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 V 2 G C D H 2 EMITTER K L S MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –40 –40 –5.0 –600 Unit Vdc Vdc Vdc mAdc V All Dimension in mm THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.8 RqJA PD 556 200 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT4403W = K3T, 2T ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –0.1 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –0.1 mAdc, IC = 0) Base Cutoff Current (VCE = –35 Vdc, VEB = –0.4 Vdc) Collector Cutoff Current (VCE = –35 Vdc, VEB = –0.4 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO –40 V(BR)CBO –40 V(BR)EBO –5.0 IBEV — ICEX — –0.1 –0.1 µAdc — µAdc — Vdc — Vdc Vdc    v v http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 MMBT4403W Elektronische Bauelemente PNP Silicon Switching Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –150 mAdc, VCE = –2.0 Vdc)(3) (IC = –500 mAdc, VCE = –2.0 Vdc)(3) Collector – Emitter Saturation Voltage(3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) Base – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) hFE 30 60 100 100 20 VCE(sat) — — VBE(sat) –0.75 — –0.95 –1.3 –0.4 –0.75 Vdc — — — 300 — Vdc — SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VBE = –0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Small – Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Output Admittance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) fT 200 Ccb — Ceb — hie 1.5 hre 0.1 hfe 60 hoe 1.0 100 500 8.0 — 15 X 10– 4 30 kΩ 8.5 pF — pF MHz mmhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ( (VCC = –30 Vdc, VEB = –2.0 Vdc, , , IC = –150 mAdc, IB1 = –15 mAdc) ( (VCC = –30 Vdc, IC = –150 mAdc, , , IB1 = IB2 = –15 mAdc) td tr ts tf — — — — 15 ns 20 225 ns 30 v 300 ms, Duty Cycle v 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT – 30 V < 2 ns +2 V 0 – 16 V 1.0 kΩ 10 to 100 µs, DUTY CYCLE = 2% CS* < 10 pF 200 Ω +14 V 0 –16 V < 20 ns 1.0 kΩ – 30 V 200 Ω CS* < 10 pF 1.0 to 100 µs, DUTY CYCLE = 2% + 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time Figure 2. Turn–Off Time http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 MMBT4403W Elektronische Bauelemente PNP Silicon Switching Transistor TRANSIENT CHARACTERISTICS 25°C 30 20 100°C 10 7.0 5.0 Ceb 3.0 VCC = 30 V IC/IB = 10 Capacitance (pF) Q, Charge (nC) 2.0 1.0 0.7 0.5 0.3 0.2 10 7.0 5.0 Ccb QT QA 2.0 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 10 20 30 50 70 100 200 300 500 Reverse Voltage (V) IC, Collector Current (mA) Figure 3. Capacitances Figure 4. Charge Data 100 70 50 IC/IB = 10 100 70 50 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 VCC = 30 V IC/IB = 10 tr, Rise Time (ns) t, Time (ns) 30 20 30 20 10 7.0 5.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, Collector Current (mA) IC, Collector Current (mA) Figure 5. Turn–On Time Figure 6. Rise Time 200 IC/IB = 10 ts', Storage Time (ns) 100 70 50 IB1 = IB2 ts′ = ts – 1/8 tf 30 20 IC/IB = 20 10 20 30 50 70 100 200 300 500 IC, Collector Current (mA) Figure 7. Storage Time http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 MMBT4403W Elektronische Bauelemente PNP Silicon Switching Transistor NOISE FIGURE VCE = –10 Vdc, TA = 25°C Bandwidth = 1.0 Hz 10 10 f = 1 kHz SMALL–SIGNAL CHARACTERISTICS NF, Noise Figure (dB) 6 4 IC = 1.0 mA, RS = 430 Ω IC = 500 µA, RS = 560 Ω IC = 50 µA, RS = 2.7 kΩ IC = 100 µA, RS = 1.6 kΩ NF, Noise Figure (dB) 8 8 6 4 IC = 50 µA 100 µA 500 µA 1.0 mA 2 RS = OPTIMUM SOURCE RESISTANCE 2 0 0.01 0.02 0.05 0.1 0.2 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k f, Frequency (kHz) RS , Source Resistance (OHMS) Figure 8. Frequency Effects Figure 9. Source Resistance Effects h PARAMETERS VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between selected from the MMBT4403W lines, and the same units hfe and other “h” parameters for this series of transistors. To were used to develop the correspondingly–numbered curves obtain these curves, a high–gain and a low–gain unit were on each graph. 1000 700 500 100 k 50 k MMBT4403W UNIT 1 MMBT4403W UNIT 2 hje, Input Impedance (OHMS) 20 k 10 k 5k 2k 1k 500 200 hfe, Current Gain 300 200 MMBT4403W UNIT 1 MMBT4403W UNIT 2 100 70 50 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, Collector Current (mAdc) IC, Collector Current (mAdc) Figure 10. Current Gain 20 500 MMBT4403W UNIT 1 MMBT4403W UNIT 2 Figure 11. Input Impedance hre, Voltage Feedback RATIO (X10 -4) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 hoe, Output Admittance (µ mhos) 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403W UNIT 1 MMBT4403W UNIT 2 2.0 3.0 5.0 7.0 10 IC, Collector Current (mAdc) IC, Collector Current (mAdc) Figure 12. Voltage Feedback Ratio http://www.SeCoSGmbH.com Figure 13. Output Admittance Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 MMBT4403W Elektronische Bauelemente PNP Silicon Switching Transistor STATIC CHARACTERISTICS 3.0 hFE, Normalized Current Gain 2.0 VCE = 1.0 V VCE = 10 V TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 0.1 – 55°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, Collector Current (mA) Figure 14. DC Current Gain 1.0 Vce, Collector-Emitter Voltage (V) 0.8 0.6 IC = 1.0 mA 0.4 10 mA 100 mA 500 mA 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IB, Base Current (mA) Figure 15. Collector Saturation Region 1.0 0.8 TJ = 25°C VBE(sat) @ IC/IB = 10 VBE(sat) @ VCE = 10 V 0.5 0 Coefficient (mV/ ° C ) qVC for VCE(sat) 0.5 1.0 1.5 2.0 Voltage (V) 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 qVS for VBE 0.5 1.0 2.0 5.0 10 20 50 100 200 500 2.5 0.1 0.2 IC, Collector Current (mA) IC, Collector Current (mA) Figure 16. “On” Voltages Figure 17. Temperature Coefficients http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5