MMBT491

MMBT491 Elektronische Bauelemente NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low equivalent on-resistance MARKING: 491 Base 3 Collector 1 SOT-23 Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 2 Emitter A L 3 H K 2 J J K C Top View 1 BS L S V V G D H All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction & Storage temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 80 60 5 1 500 150, -55~150 Unit V V V A mW °C ELECTRICAL CHARACTERISTICS at Ta = 25°C Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO 1 V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) 1 hFE(2) 1 hFE(3) 1 hFE(4) 1 VCE(sat)1 1 VCE(sat)2 1 VBE(sat) 1 VBE fT COB Min. 80 60 5 100 100 80 30 150 - Max. 0.1 0.1 300 0.25 0.5 1.1 1 10 Unit V V V μA μA Test Conditions IC=100μA,IE=0 IC=10mA,IB=0 IE=100μA,IC=0 VCB=60V, IE=0 VEB=4V, IC=0 VCE=5V,IC=1mA VCE=5V,IC=500mA VCE=5V,IC=1A VCE=5V,IC=2A IC=500mA, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA IC=1A, VCE=5V VCE = 10V, IC = 50mA, f = 100MHz VCB = 10V, f = 1.0MHz, IE = 0 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output Capacitance V V V V MHz pF Note: 1. Measured under pulsed conditions, Pulse width = 300 μs, Duty cycle ≤ 2%. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2002 Rev. A Page 1 of 2 MMBT491 Elektronische Bauelemente NPN Silicon General Purpose Transistor CHARACTERISTIC CURVES 0.6 0.5 0.4 0.3 0.2 0.1 0 1mA 10mA 100mA 1A 10A IC / IB = 10 IC / IB = 50 + 25 C 0.6 0.5 0.4 0.3 0.2 0.1 0 IC / IB = 10 - 55 C + 25 C + 100 C 1mA 10mA 100mA 1A 10A IC - Collector Current V CE(sat) vs IC IC - Collector Current VCE(sat) vs IC 400 VCE = 5 V 1.0 300 + 100 C 0.8 0.6 0.4 100 - 55 C IC / IB = 10 200 + 25 C - 55 C + 25 C + 100 C 0.2 0 1mA 0 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A IC -Collector Current IC -Collector Current h FE vs IC 1.2 1.0 0.8 0.6 0.4 0.2 0 1mA 10mA 100mA 1A 10A 0.01 0.1V - 55 C + 25 C + 100 C VCE = 5 V V BE(sat) vs IC 10 1 DC 1s 100 ms 10 ms 1 ms 100 s 0.1 1V 10V 100V IC - Collector Current VCE - Collector Emitter Voltage (V) VBE(on) vs IC Safe Operat ing Area http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2002 Rev. A Page 2 of 2