MMBT493

MMBT493 Elektronische Bauelemente NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Medium Power Transistor Collector 1 A 3 L 3 Top View 2 CB 1 2 MARKING 493 1 Base 3 K E D F REF. G A B C D E F Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction & Storage temperature Symbol VCBO VCEO VEBO IC PD TJ, TSTG Ratings 120 100 5 1 250 150, -55~150 Unit V V V A mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Symbol V(BR)CBO * V(BR)CEO V(BR)EBO ICBO ICES IEBO * hFE(1) * hFE(2) * hFE(3) * hFE(4) * VCE(sat) * VCE(sat) * VBE(sat) * VBE(on) fT COB Min. 120 100 5 100 100 60 20 150 - Max. 0.1 0.1 0.1 300 0.3 0.6 1.15 1 10 Unit V V V μA μA μA Test Conditions IC=100μA, IE=0 IC=10mA, IB=0 IE=100μA, IC=0 VCB=100V, IE=0 VCE=100V, IE=0 VEB=4V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=250mA VCE=10V, IC=500mA VCE=10V, IC=1000mA IC=500mA, IB=50mA IC=1000mA, IB=100mA IC=1000mA, IB=100mA VCE=10V, IC=1000mA VCE = 10V, IC = 50mA, f = 100MHz VCB = 10V, f = 1.0MHz, IE = 0 *Pulse test: Pulse width ≦ 300μs, duty cycle ≦ 2% Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Transition Frequency Output Capacitance V V V V MHz pF http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2002 Rev. A Page 1 of 2 MMBT493 Elektronische Bauelemente NPN Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2002 Rev. A Page 2 of 2