MMBT5401

MMBT5401 Elektronische Bauelemente PNP Silicon General PurposeTransistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Ideal for medium power amplification and switching 1 SOT-23 A L 3 3 Top View CB 1 2 2 MARKING 2L K E D F G REF. A B C D E F Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 H J Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. ABSOLUTE MAXIMUM RATINGS Parameter Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage Collector Current - Continuous Symbol Ratings VCEO VCBO VEBO IC -150 -160 -5.0 -500 Unit V V V mA REF. G H J K L THERMAL CHARACTERISTICS Parameter Total Power Dissipation Thermal Resistance, Junction to Ambient Total Power Dissipation Thermal Resistance, Junction to Ambient Junction, Storage Temperature Alumina Substrate, TA = 25°C Derate above 25°C (2) Symbol TA = 25°C Derate above 25°C PD RθJA PD RθJA TJ, TSTG Ratings 225 1.8 556 300 2.4 417 -55 ~ +150 Unit mW mW / ℃ ℃/W mW mW / ℃ ℃/W ℃ ELECTRICAL CHARACTERISTICS Test Conditions Off Characteristics Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current On Characteristics DC Current Gain (TA = 25°C unless otherwise noted) Symbol IC = -1.0 mA, IB = 0 IC = -100 μA, IE = 0 IE = -10 μA, IC = 0 BVCEO BVCBO BVEBO ICES Min. -150 -160 -5.0 - Max. -100 -100 200 -0.2 -0.5 -1.0 -1.0 Unit V V V nA μA VCB = -120 V, IE = 0 VCB = -120 V, IE = 0, TA = 100°C IC = –1.0 mA, VCE = –5.0 V IC = –10 mA, VCE = –5.0 V IC = –50 mA, VCE = –5.0 V IC = –10 mA, IB = –1.0 mA IC = –50 mA, IB = –5.0 mA IC = –10 mA, IB = –1.0 mA IC = –50 mA, IB = –5.0 mA hFE 80 100 50 - - Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Small Signal Characteristics Current-Gain - Bandwidth Product Output Capacitance Small Signal Current Gain Noise Figure VCE(sat) VBE(sat) V V IC =-10 mA, VCE = -10 V, f = 100 MHz VCB = -10 V, IE = 0, f = 1.0 MHz IC = -1.0 mA, VCE =-10 V, f = 1.0 kHz fT COBO hFE NF Note: 100 50 - 6.0 200 8.0 MHz pF dB IC = –200 μA, VCE = –5.0 V, RS = 10 Ω, f = 1.0 kHz 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 01-June-2002 Rev. A Page 1 of 3 MMBT5401 Elektronische Bauelemente PNP Silicon General PurposeTransistor CHARACTERISTICS CURVE 200 150 hFE , CURRENT GAIN TJ = 125 C 100 70 50 -55 C 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 100 VCE = -1.0 V VCE = -5.0 V 25 C Figure 1. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region IC, COLLECTOR CURRENT ( μ A) 103 102 101 100 75 C 10-1 10-2 10-3 0.3 REVERSE 25 C FORWARD VCE = 30 V IC = ICES TJ = 125 C 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut-Off Region 01-June-2002 Rev. A Page 2 of 3 MMBT5401 Elektronische Bauelemente PNP Silicon General PurposeTransistor CHARACTERISTICS CURVE θ V, TEMPERATURE COEFFICIENT (mV/ C) 1.0 0.9 0.8 TJ = 25 C 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 θVB for VBE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 θVC for VCE(sat) TJ = -55 C to 135 C V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 VCE(sat) @ IC / IB = 10 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 VBE(sat)@ IC / IB = 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. "On" Voltages Figure 5. Temperature Coefficients C, CAPACITANCE (pF) VBB + 8.8 V 10.2 V Vin 0.25μF 10μs INPUT PULSE t, ft10 ns Vin r DUTY CYCLE = 1.0% 100 RB 5.1k 100 VCC -30 V 3.0k RC Vout 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 C ibo TJ = 25 C C obo 1N914 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 Values Shown are for IC @ 10 mA VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit Figure 7. Capacitances 1000 700 IC / IB = 10 500 TJ = 25 C 300 2000 t r @ VCC = 120 V t r @ VCC = 30 V 1000 700 500 300 200 100 70 50 30 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC / IB = 10 TJ = 25 C t f @ VCC = 30 V t s@ VCC = 120 V t @ CC = 120 V V f t, TIME (ns) 200 100 70 50 30 20 10 0.2 0.3 0.5 t d @ VBE(off) = 1.0 V VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) t, TIME (ns) IC, COLLECTOR CURRENT (mA) Figure 8. Turn-On Time Figure 9. Turn-Off Time 01-June-2002 Rev. A Page 3 of 3