MMBT5401W

MMBT5401W Elektronische Bauelemente PNP Silicon Plastic-Encapsulate Transistor SOT-323 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version Complementary to MMBT5551W K A L 3 3 Top View 1 2 CB 1 2 E D Collector 3 MARKING: K4M 1 Base F REF. G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 H REF. G H J K L J Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. 2 Emitter A B C D E F MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current-Continuous Collector Power Dissipation Thermal Resistance, Junction to Ambient Opterating & Storage Temperature SYMBOL VCBO VCEO VEBO IC PC RθJA TJ, TSTG RATINGS -160 -150 -5 -200 200 625 150, -55 ~ 150 UNIT V V V mA mW ° C/W ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Noise Figure SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT Cob NF MIN -160 -150 -5 MAX UNIT V V V nA nA -50 -50 50 60 50 240 -0.2 -0.5 -1 -1 100 6 8 V V V V MHz pF dB IC=-100µA, IE=0 IC = -1mA, IB = 0 IE=-10µA, IC=0 VCB=-120V, IE=0 VEB=-3V, IC=0 VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-0.2mA, f=1KHz, RS=10 TEST CONDITION 01-Dec-2009 Rev. A Page 1 of 2 MMBT5401W Elektronische Bauelemente PNP Silicon Plastic-Encapsulate Transistor CHARACTERISTIC CURVES 01-Dec-2009 Rev. A Page 2 of 2