MMBT5551

MMBT5551 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free General Purpose Transistor NPN Silicon SOT-23 A Dim L BS Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 A B C D G H J K J 2 FEAT URES Power dissipation PCM: Collector current ICM: 0.6 A V Collector-base voltage V(BR)CBO: 180 TJ, Tstg: -55 0.3 W (Tamb=25oC) D V 3 1 Top View G C H K L S V COLLECTOR BASE EMITTER All Dimension in mm Operating and storage junction temperature range to +150oC ELECTRICAL CHARACTERISTICS (Tamb=25oC Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Sym bol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) unless otherwise specified) Test conditions MI N 180 160 6 0.1 0.1 80 80 30 0.5 1 80 V V MHz 250 MAX UNIT V V V Ic= 100µA, IE=0 Ic= 0.1mA, IB=0 IE= 100µA, IC=0 VCB=180V, IE=0 VEB= 4V, IC=0 VCE= 5V, IC= 1mA VCE= 5V, IC=10mA VCE= 5V, IC=50mA IC=50 mA, IB= 5mA IC= 50 mA, IB= 5mA VCE=10V, IC= 10mA, f=100MHz µA µA fT DEVICE MARKING MMBT5551 = G1 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 1 of 3 MMBT5551 Elektronische Bauelemente General Purpose Transistor NPN Silicon Typical Characteristics 250 200 150 25 °C 125 °C VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.5 0.4 0.3 25 °C β = 10 100 - 40 °C 0.2 125 °C 50 0 0.1 V C E = 5V 0.1 0 - 40 °C 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 100 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 1 0.8 β = 10 V BEON - BASE EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current V BESAT - BASE EMITTER VOLTAGE (V) - 40 °C Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 °C 25 °C 0.6 0.4 0.2 0 125 °C 0.6 0.4 0.2 0 0.1 25 °C 125 °C VCE = 5V 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 1 10 I C - COLLECTOR CURRENT (mA) 100 200 Collector-Cutoff Current vs. Ambient Temperature I CBO- COLLE CTOR CURRENT (nA) VCB = 100V BV CER - BREAKDOWN VOLTAGE (V) 50 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 260 I C = 1.0 mA 240 10 220 200 180 1 25 50 75 100 TA - AMBIE NT TEMP ERATURE ( ° C) 125 160 0.1 1 10 100 1000 RESISTANCE (kΩ ) http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 2 of 3 MMBT5551 NPN Silicon Elektronische Bauelemente General Purpose Transistor Typical Characteristics (continued) 30 h FE - SMALL SIGNAL CURRENT GAIN Input and Output Capacitance vs Reverse Voltage f = 1.0 MHz 25 Small Signal Current Gain vs Collector Current 16 FREG = 20 MHz V CE = 10V CAPACITANCE (pF) 12 20 15 8 10 C ib C cb 1 10 100 4 5 0 0.1 0 1 V CE - COLLECTOR VOLTAGE (V) 10 I C - COLLECTOR CURRENT (mA) 50 Power Dissipation vs Ambient Temperature 700 PD - POWER DISSIPATION (mW) 600 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 SOT-23 TO-92 3 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 3 of 3