MMBT5551W

MMBT5551W Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor SOT-323 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version Complementary to MMBT5401W K A L 3 3 Top View 1 2 CB 1 2 E D Collector MARKING: K4N 1 Base 3 F REF. A B C D E F G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 H REF. G H J K L J Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. 2 Emitter MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current-Continuous Collector Power Dissipation Thermal Resistance, Junction to Ambient Opterating & Storage Temperature SYMBOL VCBO VCEO VEBO IC PC RθJA TJ, TSTG RATINGS 180 160 6 200 200 625 150, -55 ~ 150 UNIT V V V mA mW ° C/W ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Noise Figure SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT Cob NF MIN 180 160 6 MAX UNIT V V V nA nA 50 50 80 80 30 250 0.15 0.2 1 1 300 6 8 100 V V V V MHz pF dB IC=100µA, IE=0 IC = 1mA, IB = 0 IE=10µA, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VCE=5V, IC=0.2mA, f=1KHz, RS=1K TEST CONDITION 01-Dec-2009 Rev. A Page 1 of 2 MMBT5551W Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor CHARACTERISTIC CURVES 01-Dec-2009 Rev. A Page 2 of 2