MMBT589

MMBT589 Elektronische Bauelemente PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES 2 3 1 2 1 Base V Collector Emitter 3 A SOT-23 L BS Dim A B C D G C 2 Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 1 Top View G 3 D H H J K J K L S V MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD RθJA TJ, Tstg Parameter Value -50 -30 -5 -2 310 403 -55-150 Units V V V A mW ℃/W ℃ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Thermal Resistance,junction to Ambient Junction and Storage Temperature All Dimension in mm MARKING :589 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector-emitter cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO hFE1 DC current gain hFE2 hFE3 hFE4 VCE(sat)1 Collector-emitter saturation voltage VCE(sat)2 VCE(sat)3 Base-emitter saturation voltage Base-emitter Turn-on voltage Transition frequency Collector Output Capacitance http://www.SeCoSGmbH.com unless Test otherwise specified） MIN TYP MAX UNIT conditions Ic=-100µA,IE=0 Ic=-10mA,IB=0 IE=-100µA,IC=0 VCB=-30V,IE=0 VCES=-30V VEB=-4V,IC=0 VCE=-2V,IC=-1mA VCE=-2V,IC=-500mA VCE=-2V,IC=-1A VCE=-2V,IC=-2A IC= -500mA, IB=-50 mA IC= -1A, IB=-100 mA IC= -2A, IB=-200 mA IC= -1A, IB=-100 mA VCE=-2V, IC=-1A VCE=-5V, IC=-100 mA , f =100MHz f=1MHZ -50 -30 -5 -0.1 -0.1 -0.1 100 100 80 40 -0.25 -0.3 -0.65 -1.2 -1.1 100 15 300 V V V µA µA µA V V V V V MHz pF Page 1 of 3 VBE(sat) VBE(on) fT Cob Any changing of specification will not be informed individual 01-Jun-2002 Rev. A MMBT589 Elektronische Bauelemente PNP Silicon General Purpose Transistor 200 VCE = -2.0 V h FE , DC CURRENT GAIN 150 230 210 h FE , DC CURRENT GAIN 190 170 150 130 110 90 70 50 -55°C 25°C 125°C VCE = -1.0 V 100 50 0 0.001 0.01 0.1 1.0 10 1.0 10 100 1000 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain versus Collector Current 1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1.0 10 VCE(sat) 100 VBE(sat) VBE(on) 1.0 0.95 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Figure 2. DC Current Gain versus Collector Current IC/IB = 10 IC/IB = 100 1000 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) Figure 3. “On” Voltages Figure 4. Base Emitter Saturation Voltage versus Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 IC/IB = 10 IC/IB = 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.8 0.6 1000 mA 0.4 100 mA 0.2 10 mA 0 0.01 50 mA 0.1 1.0 10 100 1000 VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 1.0 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage versus Collector Current http://www.SeCoSGmbH.com Figure 6. Collector Emitter Saturation Voltage versus Collector Current Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 MMBT589 Elektronische Bauelemente PNP Silicon General Purpose Transistor 10 IC , COLLECTOR CURRENT (AMPS) SINGLE PULSE TEST AT Tamb = 25°C 1s 100 ms 10 ms 1 ms 100 ms 1.0 2s 0.1 0.01 0.1 1.0 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 100 Figure 7. Safe Operating Area 0.5 1.0E+00 0.05 0.02 1.0E-01 Rthja , (t) D = 0.01 0.2 0.1 1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000 Figure 8. Normalized Thermal Response http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3