MMBT591

MMBT591 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Silicon General Purpose Transistor FEATURES 3 COLLECTOR SOT-23 Dim A B 2 1 BASE Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 3 Power dissipation PCM : 0.5 W Collector Current ICM : -1 A Collector-base voltage 1 C D G 2 EMITTER A L 3 H J K L S V V(BR)CBO : -80 V Operating & storage junction temperature Tj, Tstg : - 55 C ~ + 150 C O O Top View 1 2 BS V G C D H K J Marking: 591 All Dimension in mm ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO1 V(BR)EBO ICBO IEBO hFE(1) hFE(2) DC current gain hFE(3) 1 hFE(4) 1 VCE(sat)1 Collector-emitter saturation voltage VCE(sat)2 1 Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance 1 1 1 unless otherwise specified） MIN TYP MAX UNIT V V V Test conditions Ic=-100μA,IE=0 Ic=-10mA,IB=0 IE=-100μA,IC=0 VCB=-60V,IE=0 VEB=-4V,IC=0 VCE=-5V,IC=-1mA VCE=-5V,IC=-500mA VCE=-5V,IC=-1A VCE=-5V,IC=-2A IC=-500mA,IB=-50mA IC=-1A,IB=-100mA IC=-1A,IB=-100mA VCE=-5V,IC=-1A VCE=-10V,IC=-50mA,,f=100MHz VCB=-10V,f=1MHz -80 -60 -5 -0.1 -0.1 100 100 80 15 -0.3 -0.6 -1.2 μA μA 300 V V V V MHz VBE(sat) 1 VBE1 -1 150 10 fT Cob pF Measured under pulsed conditions,Pulse width=300μs, Duty cycle≤2%. http://www.SeCoSGmbH.com Any changing of specification will not be informed individual MMBT591 Elektronische Bauelemente PNP Silicon General Purpose Transistor TYPICAL CHARACTERISTICS 0.6 0.5 0. 4 0. 3 0. 2 0. 1 0 +25C o 0. 6 0. 5 0. 4 IC/IB=10 IC/IB=50 IC/IB=10 0. 3 0. 2 0. 1 -55C o +25C o +100C o 1mA 10mA 100mA 1A 10A 0 1mA 10mA 100mA 1A 10A IC-Col l ect or Cur rent V CE(sat ) v IC IC-Col l ect o r Cu rr ent V CE(sat ) v IC 400 VCE=5V IC/IB=10 1.0 300 +100C o 0.8 +25C o 200 0.6 0. 4 -55C o +25C o +100C o 100 -55C o 0.2 0 1mA 0 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A IC-Col l ect or Cur rent IC-Col l ect or Cur rent h FE V IC 1. 2 1. 0 0.8 0.6 0.4 0.2 0 1mA 10mA 100mA 1A 10A 0.01 0.1V -55C o +25C o +100C o V BE(sat ) v IC 10 VCE=5V 1 DC 1s 100ms 10ms 1ms 100us 0.1 1V 10V 100V IC-Co l l ect or Cur rent VCE - Col l ect or Em i t t er Vol t age (V) V BE (on) v I C S a fe O perat i n g A r ea http://www.SeCoSGmbH.com Any changing of specification will not be informed individual