MMBT593

MMBT593 Elektronische Bauelemente PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Medium Power Transistor 1 SOT-23 Collector A L 3 3 3 Top View CB 1 2 2 MARKING 593 Base 1 K E D 2 Emitter F G REF. A B C D E F Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 H J Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. ABSOLUTE MAXIMUM RATINGS Parameter Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage Collector Current - Continuous Total Device Dissipation Junction and Storage Temperature Symbol Ratings VCEO VCBO VEBO IC PD TJ, TSTG -100 -120 -5 -1 250 150, Unit V V V A mW °C REF. G H J K L ELECTRICAL CHARACTERISTICS Parameter Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain (TA = 25°C unless otherwise noted) Symbol BVCEO BVCBO BVEBO ICBO ICES IEBO hFE(1)* hFE(2)* hFE(3)* hFE(4)* VCE(sat)* VCE(sat)* VBE(sat)* VBE(on)* fT COB Min. -100 -120 -5 100 100 100 50 150 - Typ. - Max. -0.1 -0.1 -0.1 300 -0.2 -0.3 -1.1 -1.0 5.0 Unit V V V μA μA μA - Test Conditions IC = -10mA, IB = 0 IC = -100μA, IE = 0 IE = -100μA, IC = 0 VCB = -100V, IE = 0 VCE = -100V, IE = 0 VEB = -4V, IC = 0 IC = - 1mA, VCE = - 5.0V IC = - 250mA, VCE = - 5.0V IC = - 0.5A, VCE = - 5.0V IC = - 1 A, VCE = - 5.0V IC = - 250mA, IB = - 25mA IC = - 500mA, IB = - 50mA IC = - 500mA, IB = - 50mA VCE = -5V, IC = 1mA VCE=-10V, IC=- 50mA, f=100MHz VCB = -10V, IE = 0, f = 1.0MHz - Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Base–Emitter Voltage Transition Frequency Collector Output Capacitance - V V V MHz pF *Pulse test: Pulse width ≦ 300μs, duty cycle ≦ 2% 01-June-2002 Rev. A Page 1 of 2 MMBT593 Elektronische Bauelemente PNP Silicon General Purpose Transistor CHARACTERISTICS CURVE 01-June-2002 Rev. A Page 2 of 2