MMBT619

MMBT619 Elektronische Bauelemente 2A , 50V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low saturation voltage A L 3 SOT-23 MARKING 619 K 1 3 Top View 2 CB 1 2 E D PACKAGE INFORMATION Package SOT-23 MPQ 3K Leader Size 7 inch REF. A B C D E F F G Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Maximum Power Dissipation 1 1 Symbol VCBO VCEO VEBO IC PC RθJA PCM RθJA TJ, TSTG Ratings 50 50 5 2 350 357 625 200 150, -55~150 Unit V V V A mW ° /W C mW ° /W C ° C Thermal Resistance From Junction To Ambient Junction, Storage Temperature Note: 1. Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Feb-2012 Rev. A Page 1 of 2 MMBT619 Elektronische Bauelemente 2A , 50V NPN Plastic Encapsulated Transistor ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current 1 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min. 50 50 5 200 300 Typ. 40 170 750 - Max. 100 100 20 200 220 1 1 20 - Unit V V V nA nA Test Conditions IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=10mA VCE=2V, IC=200mA VCE=2V, IC=1A VCE=2V, IC=2A VCE=2V, IC=6A IC=100mA, IB=10mA DC Current Gain 2 hFE 200 100 - Collector to Emitter Saturation Voltage 1 VCE(sat) - mV IC=1A, IB=10mA IC=2A, IB=50mA Base to Emitter Saturation Voltage Base to Emitter On Voltage 1 1 VBE(sat) VBE(on) Cob t(on) t(off) fT 100 V V pF ns IC=2A, IB=50mA IC=2A, VCE=2V VCB=10V, f=1MHz VCC=10V, IC=1A, IB1= -IB2=10mA Collector output capacitance Turn-On Time Turn-Off Time Transition Frequency Note: 1. Pulse width≦300µs, duty cycle≦2.0% ns MHz VCE=10V, IC=50mA, f=100MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Feb-2012 Rev. A Page 2 of 2