MMBTA05

MMBTA05 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free NPN Silicon Epitaxial Transistor DESCRIPTION  The MMBTA05 is Amplifier Transistor A L 3 SOT-23 FEATURES  3 Top View 1 2 Driver Transistor K CB 1 2 E D MARKING C F G H J Collector  REF. A B C D E F 1H  Base Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 B E  Emitter MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissapation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG RATINGS 60 60 4 0.5 300 150, -55~150 UNIT V V V A mW ℃ ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Collector Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency TEST CONDITIONS IC =100µA, IE =0 IC =1mA, IB =0 IE =100µA, IC =0 VCB =60V, IE =0 VCE =60V, IB =0 VEB =3V, IC =0 VCE =1V, IC =10mA VCE =1V, IC =100mA IC =100mA, IB =10mA VCE =1V, IC=100mA VCE =2V, IC=10mA,f=100MHz SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE1 hFE2 VCE(sat) VBE FT MIN. 60 60 4 MAX. UNIT V V V µA µA µA 100 100 0.1 0.1 0.1 400 0.25 1.2 100 V V MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Oct-2009 Rev. C Page 1 of 2 MMBTA05 Elektronische Bauelemente NPN Silicon Epitaxial Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Oct-2009 Rev. C Page 2 of 2