MMBTA13

MMBTA13 MMBTA14 Elektronische Bauelemente Darlington Amplifier Transistor NPN Silicon RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A COLLECTOR 3 3 3 SOT-23 Dim Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 A B C D G H J K J L BASE 1 1 2 1 2 BS V EMITTER 2 G C H K FEAT URES D Power dissipation PCM : 0.3W（Tamb=25℃） Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 L S V All Dimension in mm ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) * DC current gain hFE(2) * Collector-emitter saturation voltage Base-emitter voltage VCE (sat) * VBE * unless Test otherwise specified） MIN 30 30 10 0.1 0.1 MAX UNIT V V V conditions IE=0 Ic= 100μA， Ic= 100uA， IB=0 IE= 100μA， Ic=0 VCB=30 V , IE=0 VEB= 10V , IC=0 MMBTA13 MMBTA14 VCE=5V, IC= 100mA MMBTA13 MMBTA14 IC=100 mA, IB=0.1mA VCE=5V,IC= 100mA VCE=5V, IC= 10mA μA μA VCE=5V, IC= 10mA 5000 10000 10000 20000 1.5 2.0 125 V V MHz Transition frequency fT f=100MHz * Pulse Test : pulse width≤300μs，duty cycle≤2%。 Marking : MMBTA13:K2D；MMBTA14：K3D http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 1 of 3 MMBTA13 MMBTA14 Elektronische Bauelemente Darlington Amplifier Transistor NPN Silicon 500 200 100 BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 BANDWIDTH = 1.0 Hz en, NOISE VOLTAGE (nV) 10 µA 50 100 µA 20 10 5.0 10 20 50 100 200 IC = 1.0 mA IC = 1.0 mA 100 µA 10 µA 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k Figure 1. Noise Voltage Figure 2. Noise Current VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) 200 BANDWIDTH = 10 Hz TO 15.7 kHz NF, NOISE FIGURE (dB) IC = 10 µA 14 12 10 8.0 6.0 4.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 1000 0 1.0 2.0 5.0 IC = 1.0 mA 100 µA BANDWIDTH = 10 Hz TO 15.7 kHz 100 70 50 30 20 10 µA 100 µA 1.0 mA 10 1.0 2.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 1000 Figure 3. Total Wideband Noise Voltage Figure 4. Wideband Noise Figure r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.05 SINGLE PULSE SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) - TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) - TA = P(pk) ZθJA(t) 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 Figure 5. Thermal Response http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 2 of 3 MMBTA13 MMBTA14 Elektronische Bauelemente Darlington Amplifier Transistor NPN Silicon 20 TJ = 25°C |h fe |, SMALL-SIGNAL CURRENT GAIN 4.0 C, CAPACITANCE (pF) 10 7.0 5.0 2.0 VCE = 5.0 V f = 100 MHz TJ = 25°C Cibo Cobo 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 6. Capacitance Figure 7. High Frequency Current Gain TJ = 125°C 25°C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 3.0 TJ = 25°C 2.5 2.0 1.5 1.0 0.5 0.1 0.2 IC = 10 mA 50 mA 250 mA 500 mA hFE, DC CURRENT GAIN -55°C VCE = 5.0 V 500 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (µA) 500 1000 Figure 8. DC Current Gain Figure 9. Collector Saturation Region RθV, TEMPERATURE COEFFICIENTS (mV/°C) 1.6 TJ = 25°C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 0.8 0.6 -1.0 -2.0 -3.0 *APPLIES FOR IC/IB ≤ hFE/3.0 *RqVC FOR VCE(sat) 25°C TO 125°C -55°C TO 25°C 25°C TO 125°C -4.0 qVB FOR VBE -5.0 -6.0 5.0 7.0 10 -55°C TO 25°C VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 10. “On” Voltages Figure 11. Temperature Coefficients http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 3 of 3