MMBTA42

MMBTA42 Elektronische Bauelemente FEATURES · · · Plastic-Encapsulate Transistors Power dissipation & Collector current Pcm: 0.3W Icm: 0.3A High voltage V(BR): 300V A COLLECTOR General Purpose Transistor RoHS Compliant Product NPN Silicon A suffix of "-C" specifies halogen & lead-free SOT-23 Dim A B C D G H J K L S V Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 L 3 1 3 1 BASE Top View G 2 BS V 2 EMITTER 1 2 3 C D H K J All Dimension in mm ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Tamb=25 ¥ unless Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE（1） otherwise Test specified MIN 300 300 5 0.25 0.1 60 100 60 0.2 0.9 V V 200 MAX UNIT V V V conditions IE=0 Ic= 100 μA， Ic= 1 mA， IB=0 IE= 100μA， IC=0 VCB=200 V , IE=0 VEB= 5V , IC=0 μA μA VCE= 10V, IC= 1mA VCE= 10V, IC=10mA VCE=10V, IC=30mA IC=20 mA, IB= 2mA IC= 20 m A, IB=2mA VCE= 20V, I = 10mA C DC current gain HFE（2） HFE（3） Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) Transition frequency fT f=30MHz 50 MHz DEVICE MARKING MMBTA42=1D http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-June-2004 Rev. B Page 1 of 2 MMBTA42 Elektronische Bauelemente General Purpose Transistor NPN Silicon MMBTA42 120 100 hFE , DC CURRENT GAIN 80 60 40 20 0 25°C TJ = +125°C VCE = 10 Vdc −55°C 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 Figure 1. DC Current Gain Ceb @ 1MHz C, CAPACITANCE (pF) BANDWIDTH (MHz) f T, CURRENT−GAIN 100 80 70 60 50 40 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) TJ = 25°C VCE = 20 V f = 20 MHz 50 70 100 10 1.0 Ccb @ 1MHz 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance Figure 3. Current−Gain − Bandwidth 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ −55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ −55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ −55°C, VCE = 10 V Figure 4. “ON” Voltages http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-June-2004 Rev. B Page 2 of 2