MMBTA55

MMBTA55 / MMBTA56 Elek tronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Silicon Driver Transistor SOT-23 3 SOT-23 Dim Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 A 1 2 L 3 A B C 2 C OLLE C TOR 3 Top View 1 BS D G H J V 1 B AS E 2 E MIT T E R D G C H K J K L S V All Dimension in mm MAXIMUM RATINGS RATING Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous MMBTA55 MMBTA56 MMBTA55 MMBTA56 SYMBOL VCEO VCBO VEBO IC VALUE -60 -80 -60 -80 -4.0 -500 UNIT V V V mA Marking Code: MMBTA55:2H , MMBTA56:2GM THERMAL CHARACTERISTICS CHARACTERISTIC Total Device Dissipation FR-5 Board(1) TA = 25 Derate Above 25 Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2), TA = 25 Derate Above 25 Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. SYMBOL PD R JA PD R JA TJ, TSTG MAX. 225 1.8 556 300 2.4 417 -55 ~ +150 UNIT mW mW / /W mW mW / /W http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 MMBTA55 / MMBTA56 Elektronische Bauelemente PNP Silicon Driver Transistor ELECTRICAL CHARACTERISTICS (TA = 25 CHARACTERISTIC unless otherwise noted) SYMBOL Min. -60 -80 -4.0 Max. -0.1 -0.1 -0.1 UNIT OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(3) (IC = -1.0 mA, IB = 0) Emitter - Base Breakdown Voltage (IE = -100 µA, IC = 0) Collector Cutoff Current (VCE = -60 V, IB = 0 V) Collector Cutoff Current (VCB = -60 V, IE = 0) (VCB = -80 V, IE = 0) MMBTA55 MMBTA56 V(BR)CEO V(BR)EBO ICES MMBTA55 MMBTA56 ICBO V V nA µA ON CHARACTERISTICS DC Current Gain (IC = -10 mA, VCE = -1.0 V) (IC = -100 mA, VCE = -1.0 V) Collector - Emitter Saturation Voltage (IC = -100 mA, IB = -10 mA) Base - Emitter Saturation Voltage (IC = -100 mA, Vce = -1.0 V) hFE VCE(sat) VBE(ON) 100 100 -0.25 -1.2 V V SMALL - SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product(4) (IC = -100 mA, VCE = -1.0 V, f = 100 MHz) 3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0 %. 4. fT is defined as the frequency at which | hfe | extrapolates to unity. fT 50 MHz TURN-ON TIME -1.0 V VCC +40 V RL TURN-OFF TIME +VBB VCC +40 V RL 5.0 ms +10 V 0 Vin tr = 3.0 ns 5.0 mF 100 RB 100 OUTPUT Vin * CS t 6.0 pF 5.0 mF 100 5.0 ms tr = 3.0 ns RB OUTPUT * CS t 6.0 pF 100 *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 MMBTA55 / MMBTA56 Elektronische Bauelemente PNP Silicon Driver Transistor SWITCHING TIME EQUIVALENT TEST CIRCUITS f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 200 VCE = -2.0 V TJ = 25°C C, CAPACITANCE (pF) 100 70 50 30 20 Cibo TJ = 25°C 100 70 50 30 20 -2.0 -3.0 10 7.0 Cobo -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 5.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current–Gain — Bandwidth Product Figure 3. Capacitance 1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 20 400 TJ = 125°C ts h FE, DC CURRENT GAIN 200 25°C -55°C VCE = -1.0 V tf VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 100 80 60 10 -5.0 -7.0 -10 td @ VBE(off) = -0.5 V -20 -30 -50 -70 -100 tr -200 -300 -500 40 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Switching Time Figure 5. DC Current Gain -1.0 -0.8 V, VOLTAGE (VOLTS) -0.6 -0.4 -0.2 0 -0.5 TJ = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -1.0 V VCE(sat) @ IC/IB = 10 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) Figure 6. “ON” Voltages http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 4 MMBTA55 / MMBTA56 Elektronische Bauelemente PNP Silicon Driver Transistor VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25°C -0.8 -0.6 -0.4 -0.2 IC = -10 mA IC = -50 mA IC = -100 mA IC = -250 mA IC = -500 mA R qVB , TEMPERATURE COEFFICIENT (mV/° C) -1.0 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -0.5 -1.0 -2.0 RqVB for VBE 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -5.0 -10 -20 -50 -100 -200 -500 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Region Figure 8. Base–Emitter Temperature Coefficient http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 4 of 4