MMBTA92

MMBTA92 Elektronische Bauelemente RoHS Compliant Product General Purpose Transistor PNP Silicon FEATURES Pb-free is available. Power dissipation & Collector current Pcm: 0.3W Icm: -0.3A High voltage V(BR): -300V A suffix of "-C" specifies halogen & lead-free SOT-23 Dim A B C Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 A L 3 D G 2 COLLECTOR 3 1 BASE 3 1 2 Top View 1 BS H J K L S V K J V G C D H 2 EMITTER All Dimension in mm ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Tamb =25 C unless Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE（1） otherwise Test specified MIN -300 -300 -5 -0.25 -0.1 60 100 60 -0.2 -0.9 V V 200 MAX UNIT V V V conditions IE=0 IB=0 Ic= -100uA， Ic= -1 mA， IE= -100 A， IC=0 VCB=-200 V , IE=0 VEB= -5V , IC=0 μA μA VCE= -10V, IC= - 1mA VCE= -10V, IC=-10mA VCE=-10V, IC=-30mA IC=-20 mA, IB= -2mA IC= -20 m A, IB=-2mA VCE=-20V, IC=-10mA DC current gain HFE（2） HFE（3） Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) Transition frequency fT f=30MHz 50 MHz DEVICE MARKING DEVICE MARKING MMBTA92=2D http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev.B Page 1 of 2 MMBTA92 Elektronische Bauelemente General Purpose Transistor PNP Silicon MMBTA92 300 250 hFE , DC CURRENT GAIN 200 150 100 50 0 −55°C TJ = +125°C VCE = 10 Vdc 25°C 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 Figure 1. DC Current Gain Cib @ 1MHz BANDWIDTH (MHz) f T, CURRENT−GAIN 100 150 130 110 90 70 50 30 10 1 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) TJ = 25°C VCE = 20 Vdc F = 20 MHz 17 19 21 C, CAPACITANCE (pF) 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance Figure 3. Current−Gain − Bandwidth 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ −55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ −55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ −55°C, VCE = 10 V Figure 4. “ON” Voltages http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 2 of 2