MMBTA92W

MMBTA92W Elektronische Bauelemente FEATURES n n n n General Purpose Transistor PNP Silicon RoHS Compliant Product Power dissipation & Collector current Pcm: 0.2W Icm: -0.3A High voltage V(BR): -300V SOT-323 A L BS Dim A B C D G H C Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 Top View 3. Collector 2. Base 1.Emitter V G J K K J D H L S V All Dimension in mm ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Tamb=25 ¥ unless Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE（1） otherwise Test specified MIN -300 -300 -5 -0.25 -0.1 60 100 60 -0.2 -0.9 V V 200 MAX UNIT V V V conditions IE=0 IB=0 Ic= -100uA， Ic= -1 mA， IE= -100 A， IC=0 VCB=-200 V , IE=0 VEB= -5V , IC=0 μA μA VCE= -10V, IC= - 1mA VCE= -10V, IC=-10mA VCE=-10V, IC=-30mA IC=-20 mA, IB= -2mA IC= -20 m A, IB=-2mA VCE=-20V, IC=-10mA DC current gain HFE（2） HFE（3） Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) Transition frequency fT f=30MHz 50 MHz DEVICE MARKING MMBTA92W=K3R http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 MMBTA92W Elektronische Bauelemente General Purpose Transistor PNP Silicon MMBTA92W 300 250 hFE , DC CURRENT GAIN 200 150 100 50 0 −55°C TJ = +125°C VCE = 10 Vdc 25°C 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 Figure 1. DC Current Gain Cib @ 1MHz BANDWIDTH (MHz) f T, CURRENT−GAIN 100 150 130 110 90 70 50 30 10 1 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) TJ = 25°C VCE = 20 Vdc F = 20 MHz 17 19 21 C, CAPACITANCE (pF) 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance Figure 3. Current−Gain − Bandwidth 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ −55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ −55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ −55°C, VCE = 10 V Figure 4. “ON” Voltages http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2