MMDT2222A

MMDT2222A Elektronische Bauelemente RoHS Compliant Product NPN Silicon Multi-Chip Transistor SOT-363 * Features Power dissipation PCM : 0.15 W (Tamp.= 25 C) O .055(1.40) .047(1.20) .026TYP (0.65T YP) .021REF (0.525)REF .096(2.45) .085(2.15) 8 o 0 o .053(1.35) .045(1.15) Collector current ICM : 0.6 A C1 B2 E2 .018(0.46) .010(0.26) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) Collector-base voltage V(BR)CBO : 75 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O E1 B1 C2 .043(1.10) .035(0.90) Marking: K1P O Electrical Characteristics( Tamb=25 C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) DC current gain hFE(3) hFE(4) hFE(5) hFE(6) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output Capacitance Input Capacitance Noise Figure Delay time Rise time Storage time Fall time http://www.SeCoSGmbH.com Dimensions in inches and (millimeters) Test conditions IE=0 MIN 75 40 6 MAX UNIT V V V Ic= 10μA， Ic= 10mA， IB=0 IE=10μA， IC=0 VCB=60 V , IE=0 VEB= 3V , IC=0 VCE=10V, IC= 0.1mA VCE=10V, IC= 1mA VCE=10V, IC= 10mA VCE=10V, IC= 150mA VCE=10V, IC= 500mA VCE=1V, IC= 150mA IC=150 mA, IB= 15mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA VCE=20V, IC= 20mA 0. 01 0. 01 35 50 75 100 40 35 0.3 1 0.6 1.2 2 300 8 25 4 10 25 225 60 300 μA μA VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 V V V V MHz pF pF dB nS nS nS nS fT Cob Cib NF td tr tS tf f=100MHz VCB=10V, IE= 0 f=1MHz VEB=0.5V, IC= 0 f=1MHz VCE=10V, IC=100μA f=1KHz,Rs=1KΩ VCC=30V, IC=150mA VBE(off)=0.5V,IB1=15mA VCC=30V, IC=150mA IB1= IB2= 15mA Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 1 of 4 MMDT2222A Elektronische Bauelemente NPN Silicon Multi-chip Transistor SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V +16 V 0 –2 V 1.0 to 100 µs, Duty Cycle ≈ 2.0% 1 kΩ < 2 ns 200 +16 V 0 CS* < 10 pF –14 V < 20 ns 1k 1N914 CS* < 10 pF 1.0 to 100 µs, Duty Cycle ≈ 2.0% + 30 V 200 –4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time 1000 700 500 300 hFE , DC Current Gain 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, Collector Current (mA) 30 50 70 100 200 300 500 700 1.0 k Figure 3. DC Current Gain 1.0 VCE , Collector–Emitter Voltage (V) 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 I B, Base Current (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 2 of 4 MMDT2222A Elektronische Bauelemente NPN Silicon Multi-Chip Transistor 200 100 70 50 t, Time (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) 200 300 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) 200 300 500 t′s = ts – 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, Time (ns) tf Figure 5. Turn – On Time Figure 6. Turn – Off Time 10 8.0 NF, Noise Figure (dB) IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ RS = OPTIMUM RS = SOURCE RS = RESISTANCE NF, Noise Figure (dB) 10 f = 1.0 kHz 8.0 IC = 50 µA 100 µA 500 µA 1.0 mA 6.0 6.0 4.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 f, Frequency (kHz) 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, Source Resistance (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 f T, Current–Gain Bandwidth Products (MHz) 20 Ceb Capacitance (pF) 10 7.0 5.0 Ccb 3.0 2.0 0.1 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Reverse Voltage (V) 20 30 50 2.0 3.0 5.0 7.0 10 20 IC, Collector Current (mA) 30 50 70 100 Figure 9. Capacitances Figure 10. Current–Gain Bandwidth Product http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 3 of 4 MMDT2222A Elektronische Bauelemente NPN Silicon Malti-Chip Transistor +0.5 1.0 TJ = 25°C 0.8 Coefficient (mV/ °C) VBE(sat) @ IC/IB = 10 V, Voltage (V) 0.6 VBE(on) @ VCE = 10 V 0.4 1.0 V 0 – 0.5 – 1.0 – 1.5 – 2.0 VCE(sat) @ IC/IB = 10 – 2.5 RqVC for VCE(sat) 0.2 RqVB for VBE 0 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 I C, Collect Current (mA) 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C, Collect Current (mA) 500 Figure 11. “On” Voltages Figure 12. Temperature Coefficients http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 4 of 4