MMDT2227

MMDT2227 Elektronische Bauelemente RoHS Compliant Product NPN-PNP Silicon Multi-Chip Transistor SOT-363 .055(1.40) .047(1.20) 8 o 0 o * Features Power dissipation PCM : 0.2 W (Tamp.= 25 C) O .026TYP (0.65TYP) .021REF (0.525)REF .096(2.45) .085(2.15) Collector current ICM : 0.2/ -0.2 A Collector-base voltage V(BR)CBO : 75/-60 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O .053(1.35) .045(1.15) .018(0.46) .010(0.26) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) C2 B1 E1 .043(1.10) .035(0.90) E2 B2 C1 Dimensions in inches and (millimeters) NPN2222A ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat)1 Collector-emitter saturation voltage VCE(sat)2 VBE(sat)1 Base -emitter saturation voltage VBE(sat)2 Transition frequency Collector output capacitance Noise Figure Test Electrical Characteristics( Tamb=25 O C unless otherwise specified) unless otherwise MIN 75 conditions specified） TYP MAX UNIT V V V Ic=10μA,IE=0 Ic=10mA,IB=0 IE=10μA,IC=0 VCB=60V,IE=0 VEB=3V,IC=0 VCE=10V,IC=150mA IC=150mA,IB=15mA IC=500mA,IB=50mA IC=150mA,IB=15mA IC=500mA,IB=50mA VCE=20V,IC=20mA,f=100MHz VCB=10V,IE=0,f=1MHz VCE=10V,Ic=0.1mA, f=1KHZ,Rs=1KΩ 40 6 10 10 100 300 0.3 1 nA nA V V V V MHz 1.2 2 300 8 4 fT Cob NF pF dB http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 1 of 6 MMDT2227 Elektronische Bauelemente NPN-PNP Silicon Multi-Chip Transistor PNP2907A ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat)1 Collector-emitter saturation voltage VCE(sat)2 VBE(sat)1 Base -emitter saturation voltage Transition frequency Collector output capacitance VBE(sat)2 Test conditions unless otherwise MIN specified） TYP MAX UNIT V V V Ic=-10μA,IE=0 Ic=-10mA,IB=0 IE=-10μA,IC=0 VCB=-50V,IE=0 VEB=-3V,IC=0 VCE=-10V,IC=-150mA IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA VCE=-20V,IC=-50mA,f=100MHz VCB=-10V,IE=0,f=1MHz -60 -60 -5 -10 -10 100 300 nA nA -0.4 -1.6 V V V V MHz -1.3 -2.6 200 8 fT Cob pF SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V +16 V 0 –2 V 1.0 to 100 µs, Duty Cycle ≈ 2.0% 1 kΩ < 2 ns 200 +16 V 0 CS* < 10 pF –14 V < 20 ns 1k 1N914 CS* < 10 pF 1.0 to 100 µs, Duty Cycle ≈ 2.0% + 30 V 200 –4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 2 of 6 MMDT2227 Elektronische Bauelemente NPN-PNP Silicon Multi-chip Transistor NPN2222 1000 700 500 300 hFE , DC Current Gain 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, Collector Current (mA) 30 50 70 100 200 300 500 700 1.0 k Figure 3. DC Current Gain 1.0 VCE , Collector–Emitter Voltage (V) 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 I B, Base Current (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region 200 100 70 50 t, Time (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) 200 300 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) 200 300 500 t′s = ts – 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, Time (ns) tf Figure 5. Turn – On Time Figure 6. Turn – Off Time http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 3 of 6 MMDT2227 Elektronische Bauelemente NPN-PNP Silicon Multi-Chip Transistor NPN2222 10 8.0 NF, Noise Figure (dB) IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ RS = OPTIMUM RS = SOURCE RS = RESISTANCE NF, Noise Figure (dB) 10 f = 1.0 kHz 8.0 IC = 50 µA 100 µA 500 µA 1.0 mA 6.0 6.0 4.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 f, Frequency (kHz) 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, Source Resistance (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 f T, Current–Gain Bandwidth Products (MHz) 20 Ceb Capacitance (pF) 10 7.0 5.0 Ccb 3.0 2.0 0.1 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Reverse Voltage (V) 20 30 50 2.0 3.0 5.0 7.0 10 20 IC, Collector Current (mA) 30 50 70 100 Figure 9. Capacitances Figure 10. Current–Gain Bandwidth Product 1.0 TJ = 25°C 0.8 Coefficient (mV/ °C) VBE(sat) @ IC/IB = 10 V, Voltage (V) 0.6 VBE(on) @ VCE = 10 V 0.4 1.0 V +0.5 0 – 0.5 – 1.0 – 1.5 – 2.0 VCE(sat) @ IC/IB = 10 – 2.5 RqVB for VBE RqVC for VCE(sat) 0.2 0 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 I C, Collect Current (mA) 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C, Collect Current (mA) 500 Figure 11. “On” Voltages Figure 12. Temperature Coefficients http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 4 of 6 MMDT2227 Elektronische Bauelemente NPN-PNP Silicon Multi-Chip Transistor PNP2907 3.0 2.0 hFE , Normalized Current Gain VCE = –1.0 V VCE = –10 V TYPICAL CHARACTERISTICS TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 –0.1 – 55°C –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 I C, Collector Current (mA) Figure 13. DC Current Gain –1.0 VCE , Collector–Emitter Voltage (V) –0.8 IC = –1.0 mA –0.6 –10 mA –100 mA –500 mA –0.4 –0.2 0 –0.005 –0.01 –0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 I B, Base Current (mA) –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 Figure 14. Collector Saturation Region 300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, Collector Current tr 500 VCC = –30 V IC/IB = 10 TJ = 25°C t, Time (ns) 300 200 tf 100 70 50 30 20 2.0 V –200 –300 –500 10 7.0 5.0 –5.0 –7.0 –10 t′s = ts – 1/8 tf VCC = –30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, Time (ns) –20 –30 –50 –70 –100 I C, Collector Current (mA) –200 –300 –500 Figure 15. Turn–On Time Figure 16. Turn–Off Time http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 5 of 6 MMDT2227 Elektronische Bauelemente NPN-PNP Silicon Multi-Chip Transistor PNP2907 TYPICAL SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 f = 1.0 kHz 8.0 IC = –1.0 mA, Rs = 430 Ω –500 µA, Rs = 560 Ω –50 µA, Rs = 2.7 kΩ –100 µA, Rs = 1.6 kΩ Rs = OPTIMUM SOURCE RESISTANCE NF, Noise Figure (dB) 10 8.0 NF, Noise Figure (dB) 6.0 6.0 4.0 4.0 IC = –50 µA –100 µA –500 µA –1.0 mA 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 f, Frequency (kHz) 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k R s, Source Resistance (OHMS) Figure 17. Frequency Effects Figure 18. Source Resistance Effects 30 f T, Current–Gain — Bandwidth Product (MHz) 20 Ceb 400 300 200 C, Capacitance (pF) 10 7.0 5.0 3.0 2.0 –0.1 Ccb 100 80 60 40 30 20 –1.0 –2.0 VCE = –20 V TJ = 25°C –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –5.0 –10 –20 –50 –100 –200 –500 –1000 Reverse Voltage (VOLTS) I C, Collector Current (mA) Figure 19. Capacitances Figure 20. Current–Gain — Bandwidth Product –1.0 TJ = 25°C –0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V Coefficient (mV/ ° C) +0.5 0 RqVC for VCE(sat) –0.5 –1.0 –1.5 –2.0 VCE(sat) @ IC/IB = 10 –2.5 –0.1 –0.2 –0.5 –1.0 –2.0 RqVB for VBE –0.6 V, Voltage (V) –0.4 –0.2 0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 I C, Collector Current (mA) –50 –100 –200 –500 –5.0 –10 –20 –50 –100 –200 –500 I C, Collector Current (mA) Figure 21. “On” Voltage http://www.SeCoSGmbH.com Figure 22. Temperature Coefficients Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 6 of 6