MMDT2907A

MMDT2907A Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen-free S O T- 3 6 3 PNP Silicon Multi-Chip Transistor * Features Power dissipation PCM : 0.15 W (Tamp.= 25 C) O .055(1.40) .047(1.20) .026TYP (0.65T YP) .021REF (0.525)REF .096(2.45) .085(2.15) 8 o 0 o Collector current ICM : -0.6 A C2 B1 E1 .053(1.35) .045(1.15) .018(0.46) .010(0.26) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) Collector-base voltage V(BR)CBO : -60 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O E2 B2 C1 .043(1.10) .035(0.90) Marking: K2F, 2F Dimensions in inches and (millimeters) Electrical Characteristics( Tamb=25 O C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) DC current gain hFE(3) hFE(4) hFE(5) Collector-emitter saturation voltage VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 Test conditions IE=0 MIN -60 -60 -5 -0. 01 -0. 01 75 100 100 100 50 -0.4 -1.6 -1.3 -2.6 200 8 30 10 40 225 60 V V V V MHz pF pF nS nS nS nS 300 MAX UNIT V V V Ic= -10μA， Ic= -10mA， IB=0 IE=-10μA， IC=0 VCB=-50 V , IE=0 VEB= -3V , IC=0 VCE=-10V, IC= -0.1mA VCE=-10V, IC= -1mA VCE=-10V, IC=-10mA VCE=-10V, IC= -150mA VCE=-10V, IC=-500mA IC=-150 mA, IB=-15mA IC=-500 mA, IB=- 50mA IC=-150 mA, IB=-15mA IC=-500 mA, IB= -50mA VCE=-20V, IC= -50mA μA μA Base-emitter saturation voltage Transition frequency fT Cob Cib td tr tS tf f=100MHz VCB=-10V, IE= 0 Output Capacitance Input Capacitance Delay time Rise time Storage time Fall time f=1MHz VEB=-2V, IC= 0 f=1MHz VCC=-30V, IC=-150mA,IB1=-15mA VCC=-6V, IC=-150mA IB1= IB2= -15mA http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2007 Rev. C Page 1 of 3 MMDT2907A Elektronische Bauelemente PNP Silicon Multi-Chip Transistor TYPICAL CHARACTERISTICS 3.0 2.0 hFE , Normalized Current Gain VCE = –1.0 V VCE = –10 V TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 –0.1 – 55°C –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 I C, Collector Current (mA) Figure 3. DC Current Gain –1.0 VCE , Collector–Emitter Voltage (V) –0.8 IC = –1.0 mA –0.6 –10 mA –100 mA –500 mA –0.4 –0.2 0 –0.005 –0.01 –0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 I B, Base Current (mA) –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 Figure 4. Collector Saturation Region 300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, Collector Current tr 500 VCC = –30 V IC/IB = 10 TJ = 25°C t, Time (ns) 300 200 tf 100 70 50 30 20 2.0 V –200 –300 –500 10 7.0 5.0 –5.0 –7.0 –10 t′s = ts – 1/8 tf VCC = –30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, Time (ns) –20 –30 –50 –70 –100 I C, Collector Current (mA) –200 –300 –500 Figure 5. Turn–On Time Figure 6. Turn–Off Time http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 2 of 3 MMDT2907A Elektronische Bauelemente PNP Silicon Multi-Chip Transistor TYPICAL SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 f = 1.0 kHz 8.0 NF, Noise Figure (dB) IC = –1.0 mA, Rs = 430 Ω –500 µA, Rs = 560 Ω –50 µA, Rs = 2.7 kΩ –100 µA, Rs = 1.6 kΩ Rs = OPTIMUM SOURCE RESISTANCE NF, Noise Figure (dB) 8.0 6.0 6.0 4.0 4.0 IC = –50 µA –100 µA –500 µA –1.0 mA 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 f, Frequency (kHz) 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k R s, Source Resistance (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 f T, Current–Gain — Bandwidth Product (MHz) 20 Ceb 400 300 200 C, Capacitance (pF) 10 7.0 5.0 3.0 2.0 –0.1 Ccb 100 80 60 40 30 20 –1.0 –2.0 VCE = –20 V TJ = 25°C –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –5.0 –10 –20 –50 –100 –200 –500 –1000 Reverse Voltage (VOLTS) I C, Collector Current (mA) Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product –1.0 TJ = 25°C –0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V Coefficient (mV/ ° C) +0.5 0 RqVC for VCE(sat) –0.5 –1.0 –1.5 –2.0 VCE(sat) @ IC/IB = 10 –2.5 –0.1 –0.2 –0.5 –1.0 –2.0 RqVB for VBE –0.6 V, Voltage (V) –0.4 –0.2 0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 I C, Collector Current (mA) –50 –100 –200 –500 –5.0 –10 –20 –50 –100 –200 –500 I C, Collector Current (mA) Figure 11. “On” Voltage http://www.SeCoSGmbH.com Figure 12. Temperature Coefficients Any changing of specification will not be informed individual 01-Jan-2007 Rev.C Page 3 of 3