MMDT3904

MMDT3904 Elektronische Bauelemente NPN Silicon Multi-Chip Transistor SOT-363 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free * Features .055(1.40) .047(1.20) Power dissipation PCM : 0.2 W (Tamp.= 25 C) O .026TYP (0.65TYP) .021REF (0.525)REF .096(2.45) .085(2.15) 8 o 0 o Collector current ICM : 0.2 A C2 B1 E1 .053(1.35 .045(1.15 Collector-base voltage V(BR)CBO : 60 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O .018(0.46) .010(0.26) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) E2 B2 C1 .043(1.10) .035(0.90) Marking: K6N or MA O Dimensions in inches and (millimeters) ElECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE（1） DC current gain hFE（2） Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) VCE= 1V, IC= 50mA 60 0.3 0.95 300 4 35 35 200 50 V V MHz pF nS nS nS nS Test conditions IE=0 MIN 60 40 5 0.05 0.05 0.05 100 300 MAX UNIT V V V Ic= 10 μA， Ic= 1 mA， IB=0 IE= 10μA， IC=0 VCB= 30 V , IE=0 VCE= 30 V , IB=0 VEB= 5V , VCE= 1V, IC=0 IC= 10mA μA μA μA IC=50 mA, IB= 5mA IC= 50 mA, IB= 5mA VCE= 20V, IC= 10mA fT Cob td tr tS tf f=100MHz VCB=5V, IE= 0 Output Capacitance Delay time Rise time Storage time Fall time http://www.SeCoSGmbH.com f=1MHz VCC=3V, VBE=0.5V IC=10mA , IB1=1mA VCC=3V, IC=10mA IB1= IB2= 1mA Any changing of specification will not be informed individual 06-May-2010 Rev. C Page 1 of 2 MMDT3904 Elektronische Bauelemente NPN Silicon Multi-Chip Transistor 15 f = 1MHz 200 150 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 10 100 5 Cibo 50 Cobo 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 0 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage 1 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE IC IB = 10 1000 hFE, DC CURRENT GAIN TA = 125°C 100 TA = -25°C TA = +25°C 0.1 10 VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 I _ = 10 C 0.01 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current IB VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 06-May-2010 Rev.C Page 2 of 2