MMDT3906

MMDT3906 Elektronische Bauelemente RoHS Compliant Product PNP Silicon Multi-Chip Transistor SOT-363 * Features Power dissipation. PCM ICM : 0.2 W (Tamp.=25 C) O .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF .096(2.45) .085(2.15) 8 o 0 o .053(1.35 .045(1.15 Collector current : - 0.2 A Collector -base voltage V(BR) CBO : - 40 V Operating & storage junction temperature Tj, Tstg : -55 C ~ +150 C O O .018(0.46) .010(0.26) C2 B1 E1 .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) E2 B2 C1 .043(1.10) .035(0.90) Marking : K3N or A2 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) unless otherwise specified Test Ic=-10 A,IE=0 Ic=-1mA,IB=0 IE=-10 A,IC=0 VCB=-30V,IE=0 VEB=-5V,IC=0 VCE=-1V,IC=-0.1mA VCE=-1V,IC=-1mA VCE=-1V,IC=-10mA VCE=-1V,IC=-50mA VCE=-1V,IC=-100mA IC=-10mA,IB=-1mA IC=-50mA,IB=-5mA IC=-10mA,IB=-1mA IC=-50mA,IB=-5mA VCE=-20V,IC=-10mA,f=100MHz VCB=-5V,IE=0,f=1MHz VCE=-5V,Ic=-0.1mA, f=1KHZ,Rg=1K VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=- 1mA VCC=-3V, IC=-10mA IB1=-IB2=- 1mA 250 4.5 4 35 35 225 75 -0.65 conditions MIN TYP MAX UNIT V V V -40 -40 -5 -0.05 -0.05 60 80 100 60 30 -0.25 -0.4 -0.85 -0.95 300 A A DC current gain hFE(3) hFE(4) hFE(5) Collector-emitter saturation voltage VCE(sat)1 VCE(sat)2 V V V V MHz pF dB nS nS nS nS Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Delay time Rise time Storage time Fall time VBE(sat)1 VBE(sat)2 fT Cob NF td tr tS tf http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 06-May-2010 Rev.C Page 1 of 2 MMDT3906 Elektronische Bauelemente PNP Silicon Multi-Chip Transistor 100 f = 1MHz 200 150 100 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 10 50 Cibo Cobo 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage 1000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 10 IC IB = 10 hFE, DC CURRENT GAIN TA = 125°C 1 100 TA = -25°C TA = +25°C 0.1 10 VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.0 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 100 06-May-2010 Rev.C Page 2 of 2