MMDT3946

MMDT3946 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” indicates halogen-free. NPN / PNP Multi-Chip Transistor FEATURE Complementary Pair One 3904-Type NPN One 3906-Type PNP Epitaxial Planer Die Construction Ideal for Low Power Amplification and Switching A E SOT-363 L 6 5 B1 4 E1 . F DG REF. A B C D E F B MARKING 46 C2 . 1 E2 C K H J 2 B2 3 C1 Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. E1, B1, C1 = PNP3906 E2, B2, C2 = NPN3904 ABSOLUTE MAXIMUM RATINGS OF NPN3904 at Ta = 25°C PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent – Continuous Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ TSTG VALUE 60 40 5 0.2 0.2 150 -55~150 UNITS V V V A W ℃ ℃ - -2010 Rev. E Page 1 of 5 MMDT3946 Elektronische Bauelemente NPN / PNP Multi-Chip Transistor ELECTRICAL CHARACTERISTICS OF NPN 3904 at Ta = 25°C CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current TEST CONDITION IC=10μA, IE=0 IC = 1 mA, IB = 0 IE=10μA, IC=0 VCB=30V, IE=0 VEB=30V, IB=0 VEB=5V, IC=0 VCE=1V, IC=0.1mA VCE=1V, IC=1mA SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 Cob fT NF Td Tr Ts Tf MIN. 60 40 5 MAX. UNIT V V V 0.05 0.5 0.05 40 70 100 60 30 0.2 0.3 0.65 0.85 0.95 4 300 5 35 35 200 50 300 μA μA μA DC Current Gain VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA Collector-emitter Saturation Voltage IC=10mA, IB=1mA IC=50mA, IB=5mA V V V V pF MHz dB nS nS nS nS Base-Emitter Saturation Voltage Output Capacitance Transition Frequency Noise Figure Delay TIme Rise Time Storage Time Fall Time IC=10mA, IB=1mA IC=50mA, IB=5mA VCB=5V, IE=0, f=1MHz VCE=20V, IC=20mA, f=100MHz VCE=5V, IC=0.1mA, f=1kHz Rg=1KΩ, VCC=3V, VBE=0.5V, IC=10mA, IB1=- IB2 = 1mA VCC=3V, IC=10mA, IB1=- IB2 = 1mA ABSOLUTE MAXIMUM RATINGS OF PNP 3906 at Ta = 25°C PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent – Continuous Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ TSTG VALUE -40 -40 -5 -0.2 0.2 150 -55~150 UNITS V V V A W ℃ ℃ 14-Apr-2010 Rev. E Page 2 of 5 MMDT3946 Elektronische Bauelemente NPN / PNP Multi-Chip Transistor ELECTRICAL CHARACTERISTICS OF PNP 3906 at Ta = 25°C CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current TEST CONDITION IC=-10μA, IE=0 IC = -1mA, IB = 0 IE=-10μA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 Cob fT NF Td Tr Ts Tf MIN. -40 -40 -5 MAX. UNIT V V V -0.05 -0.05 60 80 100 60 30 -0.25 -0.4 -0.65 -0.85 -0.95 4.5 250 4 35 35 225 75 300 μA μA DC Current Gain VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA Collector-emitter Saturation Voltage IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA V V V V pF MHz dB nS nS nS nS Base-Emitter Saturation Voltage Collector Output Capacitance Transition Frequency Noise Figure Delay TIme Rise Time Storage Time Fall Time IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCB=-5V, IE=0, f=1MHz VCE=-20V, IC=-10mA, f=100MHz VCE=-5V, IC=-0.1mA, f=1kHz Rg=1KΩ, VCC=-3V, VBE=-0.5V, IC=-10mA, IB1=- IB2 = -1mA VCC=-3V, IC=-10mA, IB1=- IB2 = -1mA 14-Apr-2010 Rev. E Page 3 of 5 MMDT3946 Elektronische Bauelemente NPN / PNP Multi-Chip Transistor CHARACTERISTIC CURVES 14-Apr-2010 Rev. E Page 4 of 5 MMDT3946 Elektronische Bauelemente NPN / PNP Multi-Chip Transistor CHARACTERISTIC CURVES 14-Apr-2010 Rev. E Page 5 of 5