MMDT4401

MMDT4401 Elektronische Bauelemente RoHS Compliant Product NPN Plastic-Encapsulate Multi-Chip Transistor SOT-363 * Features Power Dissipation. PCM ICM : 0.2 W (Temp.=25 C) O .055(1.40) .047(1.20) .026TYP (0.65T YP) .021REF (0.525)REF .096(2.45) .085(2.15) 8 o 0 o Collector Current : 0.6 A Collector-Base vVoltage V(BR) CBO : 60 V Operating & Storage Junction Temperature Tj,T stg : -55 C ~ +150 C O O .053(1.35) .045(1.15) .018(0.46) .010(0.26) C2 B1 E1 .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) E2 B2 C1 .043(1.10) .035(0.90) Marking : K2X Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) unless otherwise specified Test conditions MIN 60 40 6 0.1 0.1 0.1 20 40 80 100 40 0.4 0.75 0.75 0.95 1.2 250 6.5 15 20 225 30 V V V V MHz pF nS nS nS nS 300 TYP MAX UNIT V V V µA µA µA Ic=100µA , IE=0 IC= 1mA , IE=100µA, IB=0 IC=0 VCB=50 V , IE=0 VCE=35 V , IB=0 VEB=5V , VCE=1 V, VCE=1 V, VCE=1 V, VCE=1 V, VCE=2 V, IC=0 IC= 0.1mA IC= 1mA IC= 10mA IC= 150mA IC= 500mA DC current gain hFE(3) hFE(4) hFE(5) Collector-emitter saturation voltage VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob td tr tS tf IC=150 mA, IB=15mA IC=500 mA, IB=50mA IC= 150 mA, IB=15mA IC= 500 mA, IB=50mA VCE= 10V, IC= 20mA f = 100MHz VCB=5V, f=1MHz VCC=30V, VBE=2V IC=150mA , IB1=15mA VCC=30V, IC=150mA IB1= IB2= 15mA IE= 0 Base-emitter saturation voltage Transition frequency Output Capacitance Delay time Rise time Storage time Fall time http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev.B Page 1 of 2 MMDT4401 Elektronische Bauelemente NPN Plastic-Encapsulate Multi-Chip Transistor Typical Characteristics MMDT4401 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev.B Page 2 of 2