MMDT4403

MMDT4403 Elektronische Bauelemente RoHS Compliant Product PNP Silicon Multi-Chip Transistor SOT-363 * Features Power dissipation. PCM ICM : 0.2 W (Temp.=25 C) O .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF .096(2.45) .085(2.15) 8 o 0 o Collector current : - 0.6 A C2 B1 E1 .053(1.35) .045(1.15) .018(0.46) .010(0.26) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) Collector -base voltage V(BR) CBO : - 40 V Operating & storage junction temperature Tj, Tstg : -55 C ~ +150 C O O E2 B2 C1 .043(1.10) .035(0.90) Marking : K2T Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) unless otherwise specified Test conditions IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 IC= -0.1mA IC= -1mA IC= -10mA IC= -150mA IC= -500mA 30 60 100 100 20 -0.4 -0.75 -0.75 -0.95 -1.3 200 V V V V MHz 300 MIN -40 -40 -5 -0.1 -0.1 -0.1 TYP MAX UNIT V V V µA µA µA Ic=-100µA , IC= -1mA , IE=-100µA, VCB=-50 V , VCE=-35 V , VEB=-5V , VCE=-1 V, VCE=-1 V, VCE=-1 V, VCE=-2 V, VCE=-2 V, DC current gain hFE(3) hFE(4) hFE(5) Collector-emitter saturation voltage VCE(sat)1 VCE(sat)2 IC=-150 mA, IB=-15mA IC=-500 mA, IB=-50mA IC= -150 mA, IB=-15mA IC= -500 mA, IB=-50mA VCE= -10V, IC= -20mA f = 100MHz VCB=-10V, f=1MHz VCC=-30V, VBE=-2V IC=-150mA , IB1=-15mA VCC=-30V, IC=-150mA IB1= IB2= -15mA I E= 0 Base-emitter saturation voltage VBE(sat)1 VBE(sat)2 Transition frequency fT Output Capacitance Delay time Rise time Storage time Fall time Cob td tr tS tf 8.5 15 20 225 30 pF nS nS nS nS http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev.B Page 1 of 2 MMDT4403 Elektronische Bauelemente PNP Silicon Multi-Chip Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev.B Page 2 of 2