MMDT4413

MMDT4413 Elektronische Bauelemente NPN - PNP Plastic-Encapsulated Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Complementary Pair Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching SOT-363 .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF .096(2.45) .085(2.15) .053(1.35) .045(1.15) 8 o 0 o MARKING K13 EQUIVALENT CIRCUIT .014(0.35) .006(0.15) .087(2.20) .079(2.00) .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) .043(1.10) .035(0.90) Dimensions in inches and (millimeters) ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance. Junction to Junction & Storage temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG NPN Ratings 60 40 6 0.6 0.2 625 PNP Ratings -40 -40 -5 -0.6 0.2 625 Unit V V V A W °C/W °C 150, -55~150 NPN ELECTRICAL CHARACTERISTICS at Ta = 25°C Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT COB td tr ts tf Min. 60 40 6 20 40 80 100 40 0.75 250 - Max. 0.1 0.5 0.1 300 0.4 0.75 0.95 1.2 6.5 15 20 225 30 Unit V V V μA μA μA Test Conditions IC= 100 μA, IE=0 IC= 1 mA, IB=0 IE= 100 μA, IC=0 VCB= 50 V, IE=0 VCE= 35 V, IB=0 VEB= 5V, IC=0 VCE= 1V, IC= 0.1mA VCE= 1V, IC= 1mA VCE= 1V, IC= 10mA VCE= 1V, IC= 150mA VCE= 2V, IC= 500mA IC=150 mA, IB= 15mA IC=500 mA, IB= 50mA IC= 150 mA, IB= 15mA IC= 500 mA, IB= 50mA VCE= 10V, IC= 20mA, f=100MHz VCB=5V, IE= 0, f=1MHz VCC=30 V, VBE=2.0 V, IC=150 mA, IB1=15 mA VCC=30 V, IC=150 mA, IB1 =-IB2 = 15 mA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output Capacitance Delay time Rise time Storage time Fall time V V V V MHz pF nS nS nS nS http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2005 Rev. B Page 1 of 5 MMDT4413 Elektronische Bauelemente NPN - PNP Plastic-Encapsulated Transistors PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT COB td tr ts tf Min. -40 -40 5 30 60 100 100 20 -0.75 200 - Max. -0.1 -0.5 -0.1 300 -0.4 -0.75 -0.95 -1.3 8.5 15 20 225 30 Unit V V V μA μA μA Test Conditions IC= -100 μA, IE=0 IC= -1 mA, IB=0 IE= -100 μA, IC=0 VCB= -50 V, IE=0 VCE= -35 V, IB=0 VEB= -5V, IC=0 VCE= -1V, IC= -0.1mA VCE= -1V, IC= -1mA VCE= -1V, IC= -10mA VCE= -2V, IC= -150mA VCE= -2V, IC= -500mA IC= -150 mA, IB= -15mA IC= -500 mA, IB= -50mA IC= -150 mA, IB= -15mA IC= -500 mA, IB= -50mA VCE= -10V, IC= -20mA, f=100MHz VCB=-10V, IE= 0, f=1MHz VCC=-30 V, VBE=-2.0 V, IC=-150 mA, IB1=-15 mA VCC=-30 V, IC=-150 mA, IB1 =-IB2 = -15 mA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output Capacitance Delay time Rise time Storage time Fall time V V V V MHz pF nS nS nS nS http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2005 Rev. B Page 2 of 5 MMDT4413 Elektronische Bauelemente NPN - PNP Plastic-Encapsulated Transistors CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2005 Rev. B Page 3 of 5 MMDT4413 Elektronische Bauelemente NPN - PNP Plastic-Encapsulated Transistors CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2005 Rev. B Page 4 of 5 MMDT4413 Elektronische Bauelemente NPN - PNP Plastic-Encapsulated Transistors CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2005 Rev. B Page 5 of 5