MMDT4944

MMDT4944 Elektronische Bauelemente NPN+NPN Dual-Chip Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small package (dual type) High voltage and high current High hFE, Excellent hFE linearity A E SOT-353 L 1 B PACKAGING INFORMATION Weight: 0.0081g (approximate) F DG H J C K MARKING CODE LY LGR Q1 5 4 REF. A B C D E F Q2 1 2 3 Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current – Continuous Collector Power Dissipation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC Pc TJ, TSTG RATINGS 60 50 5 0.15 0.20 +150, -55 ~ +150 UNIT V V V A W ℃ ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance TEST CONDITIONS IC = 100 µA, IE = 0 IC = 1 mA, IB = 0 IE = 100 μA, IC = 0 VCB = 60 V, IE = 0 VEB = 5 V, IC = 0 IC = 100 mA, IB = 10 mA VCE = 6V, IC = 2 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE fT COB MIN. 60 50 5 120 80 - TYP. - MAX. 0.1 0.1 0.25 400 3.5 UNIT V V V μA μA V MHz pF CLASSIFICATION OF hFE Marking Rank Range LY Y 120 - 240 LGR GR 200 – 400 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2005 Rev. A Page 1 of 2 MMDT4944 Elektronische Bauelemente NPN+NPN Dual-Chip Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2005 Rev. A Page 2 of 2