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MMDT5401

MMDT5401

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    MMDT5401 - Multi-Chip (PNPPNP) Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
MMDT5401 数据手册
Elektronische Bauelemente Plastic-Encapsulate Multi-Chip (PNP+PNP) Transistor RoHS Compliant Product SOT-363 .055(1.40) .047(1.20) 8 o 0 o MMDT5401 Features * Epitaxial Planar Die Construction * Complementary NPN Type Available (MMDT5551) .026TYP (0.65TYP) .021REF (0.525)REF .096(2.45) .085(2.15) .053(1.35) .045(1.15) C2 B1 E1 .018(0.46) .010(0.26) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) E2 B2 C1 .043(1.10) .035(0.90) Marking : K4M Dimensions in inches and (millimeters) Absolute Maximum Ratings (Tamb=25 C unless other wise specifie d) o Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Dissipation Operating Junction and Storage Temperature Range Symbol VC B O VCEO VEBO IC PC Tj, Tstg Ratings -160 -150 -5 -0.2 0.2 -55~+150 Unit V V V A W o C ELECTRICAL CHARACTERISTICS (Tamb=25oC unless other wise specifie d) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) Collector-emitter saturation voltage VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob NF Test conditions MI N -160 -150 -5 -0.05 -0.05 50 60 50 -0.2 -0.5 -1 -1 100 300 6 8.0 V V V V MHz pF 240 TYP MAX UNIT V V V µA µA IC=-100µA , I E=0 IC= -1mA , IB=0 IE=-10µA, IC=0 VCB=-120 V , IE=0 VEB=-3V , IC=0 VCE=-5 V, IC= -1mA VCE=-5 V, IC= -10mA VCE=-5 V, IC= -50mA IC=-10 mA, IB=-1mA IC=-50 mA, IB=-5mA IC= -10 mA, IB=-1mA IC= -50 mA, IB=-5mA VCE= -10V, IC= -10mA, f = 100MHz VCB=-10V, IE= 0 , f=1MHz VCE= -5.0V, IC= -200µA, RS= 10 Ω,f = 1.0kHz Base-emitter saturation voltage Transition frequency Output Capacitance Noise Figure http://www.SeCoSGmbH.com dB Any changing of specification will not be informed individual 01-Jan-2006 Rev.B Page 1 of 2 Elektronische Bauelemente Plastic-Encapsulate Multi-Chip (PNP+PNP) Transistor MMDT5401 Typical Characteristics MMDT5401 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev.B Page 2 of 2
MMDT5401 价格&库存

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