MPS2222A

MPS2222A Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free COLLECTOR General Purpose Transistor NPN Silicon TO-92 3 2 BASE FEATURES . Epitaxial Planar Die Construction . Complementary PNP Type Available (MPS2907A) 1 EMITTER 1 2 3 . Ideal for Medium Power Amplification and Switching MAXIMUM RATINGS RATING Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25 Derate Above 25 Total Device Dissipation @ TC = 25 Derate Above 25 Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD TJ, TSTG VALUE 40 75 6.0 600 625 5.0 1.5 12 -55 ~ +150 UNIT V V V mA mW mW / Watts mW / THERMAL CHARACTERISTICS CHARACTERISTIC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case SYMBOL R JA R JC MAX. 200 83.3 UNIT /W /W ELECTRICAL CHARACTERISTICS (TA = 25 CHARACTERISTIC unless otherwise noted) SYMBOL Min. Max. UNIT OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector - Base Breakdown Voltage (IC = 10 µA, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 µA, IC = 0) Collector Cutoff Current (VCE = 60 V, VEB(oFF) = 3.0 V) Collector Cutoff Current (VCB = 60 V, IE = 0) (VCB = 60 V, IE = 0, TA = 150 ) Emitter Cutoff Current (VEB = 3.0 V, IC = 0) Collector Cutoff Current (VCE = 10 V) Base Cutoff Current (VCE = 60 V, VEB(oFF) = 3.0 V) V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO ICEO IBEX 40 75 6.0 10 0.01 10 10 10 20 V V V nA µA nA nA nA http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page1 of 6 MPS2222A Elektronische Bauelemente General Purpose Transistor NPN Silicon ELECTRICAL CHARACTERISTICS (TA = 25 CHARACTERISTIC unless otherwise noted) (Continued) SYMBOL Min. Max. UNIT ON CHARACTERISTICS DC Current Gain (IC = 0.1 mA, VCE = 10 V) (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V, TA = -55 ) (IC = 150 mA, VCE = 10 V)(1) (IC = 150 mA, VCE = 1.0 V) (1) (IC = 500 mA, VCE = 10 V) (1) Collector - Emitter Saturation Voltage(1) (IC = 150 mA, IB = 15 mA) (IC = 500 mA, IB = 50 mA) Base - Emitter Saturation Voltage(1) (IC = 150 mA, IB = 15 mA) (IC = 500 mA, IB = 50 mA) 35 50 75 35 100 50 40 0.6 300 0.3 1.0 1.2 2.0 hFE - VCE(sat) V VBE(sat) V SMALL - SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product(2) (IC = 20 mA, VCE = 20 V, f = 100 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mA, VCE = 10 V, f = 1.0 KHz) (IC = 10 mA, VCE = 10 V, f = 1.0 KHz) Voltage Feedback Ratio (IC = 1.0 mA, VCE = 10 V, f = 1.0 KHz) (IC = 10 mA, VCE = 10 V, f = 1.0 KHz)) Small - Signal Current Gain (IC = 1.0 mA, VCE = 10 V, f = 1.0 KHz) (IC = 10 mA, VCE = 10 V, f = 1.0 KHz) Output Admittance (IC = 1.0 mA, VCE = 10 V, f = 1.0 KHz) (IC = 10 mA, VCE = 10 V, f = 1.0 KHz) Collector Base Time Constant (IE = 20 mA, VCB = 20 V, f = 31.8 KHz) Noise Figure (IC = 100 µA, VCE = 10 V, RS = 1.0 K , f = 1.0 KHz) fT Cobo Cibo hie 300 2.0 0.25 50 75 5.0 25 8.0 25 8.0 1.25 8.0 4.0 300 375 35 200 150 4.0 MHz pF pF K X 10-4 hre hfe - hoe rb, CC NF µmhos ps dB SWITCHING CHARACTERISTICS Delay Time (VCC = 30 V, VBE(off) = -2.0 V, Rise Time IC = 150 mA, IB1 = 15 mA) (Figure 1) Storage Time (VCC = 30 V, IC = 150 mA, Fall Time IB1 = IB2 = 15 mA) (Figure 2) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0 %. 2. fT is defined as the frequency at which | hfe | extrapolates to unity. td tr ts tf 10 25 225 60 ns ns ns ns http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page2 of 6 MPS2222A Elektronische Bauelemente General Purpose Transistor NPN Silicon SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +16 V 0 -2 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1 kΩ 200 +16 V 0 < 2 ns CS* < 10 pF 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1k 1N914 -4 V +30 V 200 -14 V < 20 ns CS* < 10 pF Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 TJ = 125°C 25°C -55°C VCE = 1.0 V VCE = 10 V 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k Figure 3. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 0.6 0.4 0.2 0 0.005 IC = 1.0 mA 10 mA 150 mA 500 mA 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page3 of 6 MPS2222A Elektronische Bauelemente General Purpose Transistor NPN Silicon 200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 t′s = ts - 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, TIME (ns) tf 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 Figure 5. Turn–On Time 10 8.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ 10 Figure 6. Turn–Off Time NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) RS = OPTIMUM RS = SOURCE RS = RESISTANCE f = 1.0 kHz 8.0 6.0 4.0 2.0 0 50 IC = 50 µA 100 µA 500 µA 1.0 mA 0.5 1.0 2.0 5.0 10 20 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 8. Source Resistance Effects 500 VCE = 20 V TJ = 25°C 30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 3.0 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) Ccb 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 20 30 50 Figure 9. Capacitances Figure 10. Current–Gain Bandwidth Product http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page4 of 6 MPS2222A Elektronische Bauelemente General Purpose Transistor NPN Silicon 1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k COEFFICIENT (mV/ °C) 1.0 V +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 0.2 0.5 RqVB for VBE 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 RqVC for VCE(sat) Figure 11. “On” Voltages Figure 12. Temperature Coefficients http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page5 of 6 MPS2222A Elektronische Bauelemente General Purpose Transistor NPN Silicon TO-92 PACKAGE OUTLINE DIMENSIONS Symbol A A1 b c D D1 E e e1 L Ö Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.400 4.700 3.430 4.300 4.700 1.270TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.173 0.185 0.135 0.169 0.185 0.050TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page6 of 6