MPSA06
Elektronische Bauelemente
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
NPN
Plastic-Encapsulate Transistor
FEATURES *Low current (max. 500 mA) *Low voltage (max. 80 V). APPLICATIONS
14.3±0.2 4.55±0.2 4.5±0.2
TO-92
3.5±0.2
(1.27 Typ.)
1.25±0.2 123
2.54±0.1
*General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; plastic package. PNP complement: MPSA56.
1: Emitter 2: Base 3: Collector
0.43+0.08 0.46±0.1
–0.07
Symbol PCM I CM V(BR)CBO Power Dissipation Collector Current
Parameter
Value 0.625 0.5 80 -55~+150 150
o
Units W A V
O
Collector-Base Voltage Storage Temperature Junction Temperature
Tstg TJ
C C
O
ELECTRICAL CHARACTERISTICS (Tamb=25 C
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage
unless
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) VCE(sat) VBE(sat)
otherwise
Test
specified)
MIN 80 80 4 0.1 0.1 0.1 100 200 0.25 1.2 V V MAX UNIT V V V µA µA µA
conditions
Ic=100µA, IE=0 IC= 1mA , IB=0 IE=100µA, IC=0 VCB=60V, IE=0 VCE=60V, IB=0 VEB=3V, IC=0 VCE=1V, IC= 100mA IC=100 mA, IB=10mA IC= 100 mA, IB=10mA VCE= 2 V, IC= 10mA f = 100MHz
Transition frequency
fT
100
MHz
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
MPSA06
Elektronische Bauelemente
NPN
Plastic-Encapsulate Transistor
Typical Characteristics
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 3
MPSA06
Elektronische Bauelemente
NPN
Plastic-Encapsulate Transistor
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 3
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