MPSA13

MPSA13 / 14 NPN Epitaxial Silicon Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Darlington TRANSISTOR Power dissipation PCM: 0.625 W (Tamb=25℃) 1 2 3 1 23 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1) * DC current gain HFE(2) * Collector-emitter saturation voltage Base-emitter voltage VCE(sat) * VBE(on) * 1. EMITTER 2. BASE 3 . COLLECTOR unless otherwise specified) Test conditions MIN 30 30 10 0.1 0.1 5000 10000 10000 20000 1.5 2.0 125 V V MHz MAX UNIT V V V µA µA Ic= 100µA, IE=0 IC= 1mA , IB=0 IE= 100µA, IC=0 VCB= 30V, IE=0 VEB= 10V, IC=0 VCE=5V, IC=10mA MPSA13 MPSA14 VCE=5V, IC=100mA MPSA13 MPSA14 IC= 100mA, IB=0.1 mA VCE=5V, IC= 100mA VCE=5V, IC= 10mA , f=100MHz Transition frequency fT * Pulse Test: pulse width 300µs, duty cycle 2%. Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 MPSA13 / 14 Elektronische Bauelemente NPN Epitaxial Silicon Transistor Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1M 10 VCE = 5V IC = 1000 IB hFE, DC CURRENT GAIN 100k V BE(sat) 1 V CE(sat) 10k 1k 1 10 100 1000 0.1 10 100 IC [mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 VCE = 5V 100 VCE = 5V IC[mA], COLLECTOR CURRENT 100 10 1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 10 1 10 100 VBE [V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter On Voltage Figure 4. Current Gain Bandwidth Product http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 MPSA13 / 14 Elektronische Bauelemente NPN Epitaxial Silicon Transistor TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b φ e e1 Dimensions In Millimeters Symbol A A1 b c D D1 E e e1 L Ö 0.000 2.440 14.100 Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min L Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.050TYP 0.096 0.555 0.185 0.104 0.571 0.063 0.000 0.015 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A C Page 3 of 3