S2N7002

S2N7002 115 mA, 60 V, RDS(ON) = 7.5 Ω Elektronische Bauelemente N-Ch Small Signal MOSFET SOT-23 A L 3 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Pb-Free Package is Available PACKAGING INFORMATION 1 Top View 2 CB 1 2 K Drain 3 E D Drain 3 702 W 1 Gate 2 Source F G REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.80 2.00 0.30 0.50 H Millimeter Min. Max. 0.013 0.10 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 J 1 Gate REF. G H J K L 702 =Device Code W =Date Code 2 Source MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Drain-Gate Voltage(RGS=1.0 M ) TC=25° 1 C Continuous Drain Current TC=100° 1 C 2 Pulsed Drain Current Continuous Gate-Source Voltage Non-Repetitive Gate-Source Voltage(tP≦ 50µS) SYMBOL VDSS VDGR RATING UNIT Vdc Vdc mAdc mAdc mAdc Vdc Vpk mW mW/° C ° C/W ° C 60 60 ±115 ID ±75 IDM ±800 VGS ±20 VGSM ±40 THERMAL CHARACTERISTICS Total Device Dissipation TA=25° C 225 PD FR-5 Board 3 Derate above 25° C 1.8 Thermal Resistance, Junction to Ambient RθJA 556 Junction and Storage Temperature TJ, TSTG -55~150 Note: 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≦ 300µs, Duty Cycle ≦ 2.0% 3. FR-5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. M AX. UNIT Vdc µAdc nAdc nAdc Vdc mA TEST CONDITION VGS = 0, ID = 10µAdc VGS=0, VDS = 60Vdc VGS=20Vdc VGS=-20Vdc OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS 60 T =25° C 1.0 Zero Gate Voltage Drain Current J IDSS TJ =125° C 500 Gate-Body Leakage Current, Forward IGSSF 100 Gate-Body Leakage Current, Reverse IGSSR -100 ON CHARACTERISTICS1 Gate Threshold Voltage VGS(th) 1.0 1.6 2.5 On-State Drain Current ID(ON) 500 3.75 Static Drain-Source On-State Voltage VDS(ON) 0.375 Static Drain-Source On-State Resistance 1.4 7.5 RDS(ON) (TA=25° C) 1.8 7.5 Static Drain-Source On-State Resistance 13.5 RDS(ON) (TA=125° C) 13.5 Forward Transconductance gFS 80 DYNAMIC CHARACTERISTICS Input Capacitance Ciss 17 50 Output Capacitance Coss 10 25 Reverse Transfer Capacitance Crss 2.5 5.0 SWITCHING CHARACTERISTICS1 Turn-On Delay Time td(ON) 7 20 Turn-Off Delay Time td(OFF) 11 40 BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage VSD -1.5 Source Current Continuous(Body Diode) IS -115 Source Current Pulsed ISM -800 Note: 1. Pulse Test: Pulse Width ≦ 300µs, Duty Cycle ≦ 2.0% http://www.SeCoSGmbH.com/ VDS = VGS, ID =250µAdc VDS≧ 2.0VDS(ON),VGS=10Vdc VGS=10Vdc, ID =500mAdc Vdc VGS=5Vdc, ID =50mAdc VGS=10Vdc, ID =500mAdc VGS=5Vdc, ID =50mAdc VGS=10Vdc, ID =500mAdc VGS=5Vdc, ID =50mAdc mmhos VDS≧ 2VDS(ON),ID =200mAdc pF pF pF nS Vdc mAdc mAdc VDS=25Vdc, VGS=0, f=1MHz VDS=25Vdc, VGS=0, f=1MHz VDS=25Vdc, VGS=0, f=1MHz VDD=25Vdc, ,ID≅500mAdc RG=25 ,RL=50 , VGEN=10V IS=11.5mAdc,VGS=0V Any changes of specification will not be informed individually. 24-Nov-2009 Rev. B Page 1 of 2 S2N7002 115 mA, 60 V, RDS(ON) = 7.5 Ω Elektronische Bauelemente N-Ch Small Signal MOSFET RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Nov-2009 Rev. B Page 2 of 2