S2N7002DW

S2N7002DW Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free 115mA, 60V Dual N-Channel MOSFET MECHANICAL DATA    SOT-363  Case: SOT-363，Molded Plastic. Case Material-UL Flammability Rating 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams(approx.) DEVICE MARKING: 702 PACKAGE INFORMATION Package SOT-363 MPQ 3K Leader Size 7’ inch REF. A B C D E F Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain – Source Voltage Drain – Gate Voltage RGS＝1MΩ Gate – Source Voltage Continuous Drain Current Power Dissipation Maximum Junction-to-Ambient Operating Junction & Storage Temperature Range Note: 1. Pulse Width Limited by Maximum Junction Temperature. Symbol VDS VDGR VGS ID PD RθJA TJ, TSTG Rating 60 60 ±20 115 380 328 -55~150 Unit V V V mA mW °C / W °C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-May-2011 Rev. B Page 1 of 3 S2N7002DW Elektronische Bauelemente 115mA, 60V Dual N-Channel MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On Resistance Forward Transconductance TJ= 25°C TJ= 125°C TC= 25°C TC= 125°C V(BR)DSS VGS(TH) IGSS IDSS ID(on) RDS(ON) gFS 60 1 0.5 80 2 ±1 1 500 7.5 13.5 V V μA μA A Ω ms VGS=0, ID=10μA VDS=VGS, ID=250μA VDS=0 , VGS= ±20V VDS=60V, VGS=0 VDS=60V, VGS=0 VGS=10V, VDS=7.5V VGS=5V, ID=0.05A VGS=10V, ID=0.5A VDS≧2 VDS(ON), ID= 0.2A Typ. Max. Unit Teat Conditions Body-Drain Diode Ratings Diode Forward On–Voltage Source Current Continuous(Body Diode) Source Current Pulsed VSD IS ISM -1.5 -115 -800 V mA mA IS=115mA, VGS=0 Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS 50 25 5 pF VDS=25V, VGS=0, f=1MHz Switching Characteristics Turn-on Delay Time Turn-off Delay Time Td(ON) Td(OFF) 20 40 nS VDD=25V, I D=0.5A RL=50Ω, VGEN=10V, RG=25Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-May-2011 Rev. B Page 2 of 3 S2N7002DW Elektronische Bauelemente 115mA, 60V Dual N-Channel MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-May-2011 Rev. B Page 3 of 3